PLZ9V1C-G3/H

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Diodes - Zener - Single

The PLZ9V1C-G3/H is a single zener diode designed for a wide range of applications, from general purpose use to more specialized applications in power management, telecommunications and industrial equipment. It features a breakdown voltage of 9.1V and operates at a maximum power of 500mW. The diode is available in the standard DO-204A package with through-hole mounting.

Description

The PLZ9V1C-G3/H is a single zener diode designed for efficient rectification, by allowing current flow in one direction only. It is constructed using a silicon substrate, and a PN junction. This allows it to exhibit excellent reverse breakdown characteristics and provide an efficient means of rectification. The breakdown voltage is typically between 8.5V and 9.1V.

Applications

The PLZ9V1C-G3/H is most suited for use in circuits requiring an efficient and reliable means of rectification. It can be used in power management applications such as voltage regulation and multiple output regulation, or in telecommunications and industrial equipment applications. It is also suitable for use in AC or DC audio applications, and in shunt regulation circuits.

Features

• Breakdown voltage of 9.1V
• Max power of 500mW
• Silicon substrate and PN junction
• Available in DO-204A package with through-hole mounting

Working Principle

The working principle of the PLZ9V1C-G3/H is determined by its construction. The diode is constructed using a PN junction, which allows current to flow in one direction. When forward biased, electrons in the N-type material can cross the junction and flow through the diode. When reverse biased, electrons in the P-type material are attracted towards the junction and impede current flow. This creates a potential difference across the junction and creates a voltage of up to 9.1V.

The breakdown voltage is affected by the doping concentration in the semiconductor material and the temperature of the diode. The higher the doping concentration and temperature, the higher the breakdown voltage. When the diode is biased above the breakdown voltage, it will allow the flow of current.

Conclusion

The PLZ9V1C-G3/H single zener diode is designed for efficient rectification and can be used in power management, telecommunications and industrial equipment applications. It offers a breakdown voltage of 9.1V and operates at a maximum power of 500mW. The breakdown voltage is determined by the doping concentration and temperature, and the diode is available in a DO-204A package with through-hole mounting.

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