PMCPB5530X,115 Allicdata Electronics
Allicdata Part #:

1727-1327-2-ND

Manufacturer Part#:

PMCPB5530X,115

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N/P-CH 20V 6HUSON
More Detail: Mosfet Array N and P-Channel 20V 5.3A, 3.4A 490mW ...
DataSheet: PMCPB5530X,115 datasheetPMCPB5530X,115 Datasheet/PDF
Quantity: 42000
3000 +: $ 0.11791
Stock 42000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.4A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 490mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6
Description

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The PMCPB5530X,115 application field and working principle merits special attention. It is an integrated circuit (IC) which is designed to provide equal current output and equal voltage across a series of multiple individual cells. This IC features a topology that employs two MOSFETs, arranged such that one is the source and the other is the drain. The IC is designed for use with MOSFETs that have the same pin layout, meaning that they are located next to one another in the same die size.The IC is primarily used in a variety of consumer electronics applications. These include power supplies, motor control, automotive, and mobile headset electronics.The PMCPB5530X,115, when used in an array, offers a unique combination of current-carrying capacity and voltage drop across the cells. This is because the source MOSFET is configured to supply current to the load when the drain MOSFET is activated. The load is effectively “pulled up” by the source MOSFET, while the voltage applied to the drain MOSFET determines the amount of current that is delivered to the load. The voltage drop across the cells is kept relatively constant, even though the current is constantly changing due to the varying voltage applied to the drain MOSFETs.The array configuration of the PMCPB5530X,115 is advantageous for several reasons. Firstly, it allows for the use of a much smaller package than if each MOSFET were packaged separately. Secondly, the equal distribution of current and voltage across the cells reduces the risk of faulty operation due to variations in the characteristics of the MOSFETs. Finally, the small size of the IC also means that it can be conveniently integrated into various systems as opposed to larger integrated circuits.As far as its working principle is concerned, the PMCPB5530X,115 is a MOSFET array which utilizes the body-drain effect. In this type of array, the source MOSFET is configured to supply a constant current to the load, while the drain is supplied with varying voltage to produce the desired output. This type of MOSFET array is well-suited for applications which require low power dissipation and high operational reliability.To summarize, the PMCPB5530X,115 is an integrated circuit which features a two MOSFETs array configuration. It is specifically designed for applications in consumer electronics, such as power supplies, motor control, automotive, and mobile headset electronics. The IC utilizes a body-drain effect to provide low power dissipation and high operational reliability. It has the advantage of requiring a much smaller package compared to other MOSFETs and is convenient to integrate into various systems.

The specific data is subject to PDF, and the above content is for reference

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