PMEG060V100EPDAZ Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7639-2-ND |
Manufacturer Part#: |
PMEG060V100EPDAZ |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE SCHOTTKY 60V 10A CFP15 |
More Detail: | Diode Schottky 60V 10A Surface Mount CFP15 |
DataSheet: | PMEG060V100EPDAZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.17861 |
10000 +: | $ 0.17640 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 560mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 16ns |
Current - Reverse Leakage @ Vr: | 700µA @ 60V |
Capacitance @ Vr, F: | 350pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | CFP15 |
Operating Temperature - Junction: | 175°C (Max) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMEG060V100EPDAZ is a MOS-Gated ultra-high-speed rectifier designed for medium- speed and low-speed circuits such as those used in automotive, industrial and consumer applications. The device features low forward voltage drop and reverse leakage current. It is widely used for various applications such as power supplies and bridges.
The PMEG060V100EPDAZ is an epitaxial planar PN junction silicon rectifier in a small plastic surface mount package. It has a peak rating of 60V, with a power dissipation rating of 100m W. It is available in lead-free terminations, making it the perfect choice for applications requiring small size and high reliability.
The construction of PMEG060V100EPDAZ consists of a metal-oxide-semiconductor (MOS) gate, an anode, and a cathode in an integrated circuit. The MOS gate is connected to the anode, and the cathode is connected to the MOS gate. The MOS gate acts like a field effect transistor, working together with the anode to control the output current from the device.
The operating principle of PMEG060V100EPDAZ begins with the application of forward voltage across the anode and cathode. When the forward voltage reaches its threshold, the MOS gate becomes charged and the PN junction is thus opened up, allowing current to flow through the device. The output current at the anode is a function of the forward bias voltage level, and can be adjusted by applying a reverse voltage to the MOS gate.
PMEG060V100EPDAZ is often used in applications where low power consumption and high switching speeds are needed. It is also a common choice for applications that require reliable and efficient operation at high temperature and low voltages. The device has low switching losses, fast turn-on and turn-off times, and a long service life.
Common applications of PMEG060V100EPDAZ include low power supply design, power management systems, automotive and industrial circuit protection, medical devices, consumer electronics and communication systems.
In conclusion, PMEG060V100EPDAZ is a single ultra-high-speed rectifier designed for low and medium speed circuits. It has low forward voltage drop and reverse leakage current, and is made in surface mount package for easy installation and reliability. It is widely used in various applications due to its high efficiency and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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