PMEG100V080ELPDZ Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	850mV @ 8A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	10ns
Current - Reverse Leakage @ Vr:	500nA @ 100V
Capacitance @ Vr, F:	110pF @ 10V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-277, 3-PowerDFN
Supplier Device Package:	CFP15
Operating Temperature - Junction:	175°C (Max)

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Introduction to the PMEG100V080ELPDZ Computer components are always evolving to keep up with the quickly-changing tech world. To keep up with the latest technologies and enhance computer performance, the PMEG100V080ELPDZ diode is an essential component. It is part of the P-channel MOSFET diode family and is mainly employed in high-power applications.The PMEG100V080ELPDZ is a single-diode rectifier used for power management applications. It has a breakdown voltage of 100V and a maximum current capacity of 170A. Its low frequency capacitance makes it suitable for power circuit design. In addition, the PMEG100V080ELPDZ provides excellent high frequency characteristics and high frequency conversion efficiency.The PMEG100V080ELPDZ diode is available in a small surface-mount package. This allows it to be used in tight spaces, enabling the diode to fit into virtually any device. Its low junction capacitance and low insertion loss also make it perfect for high speed digital and analog circuits. The PMEG100V080ELPDZ has excellent thermal resistance, making it suitable for high power applications.The PMEG100V080ELPDZ is most notably used for DC-to-DC converters, switch mode power supplies, bridge rectifier assembly, aerospace, defence and medical applications. As long as there is an application which requires improved power management, the PMEG100V080ELPDZ can be utilized.The working principle of this diode is fairly straightforward. When a current passes through it, the P-type semiconductor diode material which acts as the anode will allow electrons to enter the device, while the N-type semiconductor material acts as the cathode will allow electrons to leave the device. As a result, this diode acts as a one-way valve that depolarizes current, as it prevents current from running in the reverse direction. The PMEG100V080ELPDZ features a lower forward voltage drop, meaning that only a small portion of energy is lost upon current flow. This provides greater efficiency when the PMEG100V080ELPDZ is used in power management applications. Moreover, advanced technologies such as Soft Recovery Time, Constant Current Limit, and Low Dynamic Impedance improve the efficiency, making the PMEG100V080ELPDZ an ideal choice for applications where improved power management is required.In summary, the PMEG100V080ELPDZ is an important component for modern applications that need improved power management capabilities. Its working principle of preventing reverse current flow and its lower forward voltage drop make it an ideal choice for such applications. This diode is also available in a small, surface-mount package and features excellent thermal resistance, making it perfect for high-power applications.**End**

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