Allicdata Part #: | PMEG3010ESBZ-ND |
Manufacturer Part#: |
PMEG3010ESBZ |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE SCHOTTKY 30V 1A DSN1006-2 |
More Detail: | Diode Schottky 30V 1A Surface Mount DSN1006-2 |
DataSheet: | PMEG3010ESBZ Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.03308 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 565mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 3.2ns |
Current - Reverse Leakage @ Vr: | 45µA @ 30V |
Capacitance @ Vr, F: | 32pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-XDFN |
Supplier Device Package: | DSN1006-2 |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes - Rectifiers - Single
PMEG3010ESBZ is a rectifier diode with a magnificent performance, specially designed for power electronics applications. It can be used as backup diode in photovoltaic modules, and it is also suitable for a wide range of current rectification operations in various applications such as automotive electronics, home appliances, medical devices and power supplies.
This diode offers superior performance with an advanced built-in technology. It is of a planar design, which offers improved thermal performance and lower forward voltage drop (VF). It has excellent energy efficiency and significantly reduces power losses.
This diode is capable of withstanding very heavy currents. It has an exceptionally low reverse recovery time (trr), which allows for efficient current rectification at high efficiency and impeded reverse current flow. It has a forward voltage rating between 1.3V to 1.6V, which makes it suitable for a wide range of current rectification applications. Additionally, it features a high surge voltage rating of up to 800V.
PMEG3010ESBZ uses a passivated diffusion structure. This structure is designed to protect against temperature and current overloads, making it well-suited for use in applications exposed to significantly varying temperatures. It also features an improved surge capability and enables an efficient power loss utilization.
In order to provide the best performance possible, this diode is also equipped with zinc doping. This doping enhances the current carrying capability and helps to suppress transient thermal conduction by reducing the heat generation. It also provides a high-frequency switching capability, further reducing power losses.
The PMEG3010ESBZ is ideal for use in a wide range of applications. It is suitable for rectifying various high-current signals and lowering the voltage to a usable level for various devices. It is especially useful for high-efficiency rectification operations, such as in power supplies and dc-to-dc converters.
This diode also features a low voltage derating characteristic. This allows it to be used in high-voltage applications, while providing superior performance and efficiency. Additionally, it has a very low soft recovery feature that helps to avoid reverse current flow during the rectification process. This feature further increases the efficiency of the device.
Overall, the PMEG3010ESBZ is an ideal choice for a wide range of current rectification operations. Its advanced technology and superior performance make it suitable for a wide range of applications, making it an ideal addition to any system.
The specific data is subject to PDF, and the above content is for reference
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