PMEG4002AESFYL Allicdata Electronics
Allicdata Part #:

1727-2293-2-ND

Manufacturer Part#:

PMEG4002AESFYL

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE SCHOTTKY 40V 0.2A SOD962
More Detail: Diode Schottky 40V 200mA Surface Mount DSN0603-2
DataSheet: PMEG4002AESFYL datasheetPMEG4002AESFYL Datasheet/PDF
Quantity: 18000
9000 +: $ 0.03257
18000 +: $ 0.02769
27000 +: $ 0.02606
63000 +: $ 0.02443
Stock 18000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 525mV @ 200mA
Speed: Small Signal =
Reverse Recovery Time (trr): 1.25ns
Current - Reverse Leakage @ Vr: 80µA @ 40V
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C (Max)
Description

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PMEG4002AE is part of the Schottky Barrier Diode and a type of Rectifier. It is a single diode and designed specifically for use in power electronic applications. As such, it has been designed to help protect and maintain the integrity of the circuit in which it is used.The PMEG4002AE is a very widely used diode in a variety of industries, due to its many features and advantages. It has a very high efficiency and can switch in a few microseconds and can handle up to 10A current. It is also very suitable for use in control circuits and has a very low reverse recovery time of 7ns. Moreover, it is also very compact and very light in weight.The working of the device can be understood by looking at its structure and design. It has a metal-semiconductor structure formed at the interface between the metal and the semiconductor material that acts as a barrier and the electric field forms a depletion layer. This depletion layer is the blocking layer which is responsible for the leakage current that is present when the diode is in its reverse bias condition.When a forward voltage is applied to the diode, the barrier height reduces and the electric field expands. This leads to lower resistance of the diode, as a result of which current can flow through it. This feature of PMEG4002AE make it ideal for use in converters and power electronics such as solar systems and motor drives.The PMEG4002AE also has its own built-in protection features in the form of a temperature-dependent biasing circuit that limits the forward voltage, which helps the device to safeguard itself against overloads and excessive heat. This helps to keep the circuit components safe from damage and extend the device’s life.It can also be used in circuits which need very low voltage drops and also has a controlled temperature rise which extends the life of the device as well. Furthermore, it is also capable of sustaining very high surge power and has a very low self-heating over a wider temperature range compared with other diodes.Therefore, the PMEG4002AE is an ideal solution for a wide range of power electronic applications, thanks to its many beneficial features. With its efficiency, ruggedness and low SWaP (Size, Weight and Power), it provides reliable operation in very small areas which makes it an ideal choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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