PMP4201G,135 Allicdata Electronics
Allicdata Part #:

1727-5849-2-ND

Manufacturer Part#:

PMP4201G,135

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN 45V 0.1A 5TSSOP
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matche...
DataSheet: PMP4201G,135 datasheetPMP4201G,135 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP
Base Part Number: PMP4201
Description

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The PMP4201G,135 is a bipolar junction transistor (BJT) array device with a variety of applications. BJT arrays are transistors which are interconnected with each other. Each BJT can be individually switched on or off by using its associated Base-Emissive current control terminal. This device consists of four 2N2222A NPN BJTs. Each BJT consists of three terminals namely Base, Emitter, and Collector.

The PMP4201G,135 has a broad range of application fields. It can be used in digital logic circuits, mainly in complementary logic. For instance, it can be used in logic circuits such as bistable circuits, flip-flops, static random access memory (SRAMs), programmable logic arrays (PLAs), etc. Additionally, it can be used in analog circuits such as operational amplifiers (Op-Amps), voltage regulators, class-AB amplifiers, etc. Apart from these, the PMP4201G,135 can be utilized for signal processing, power management, and electronic switching. Moreover, it can be used in monitoring and control systems.

The working principle of BJT arrays is based on the principle of BJTs and their associated characteristics. The BJT is a three-terminal device that has regions of N-type and P-type semiconductor material. The Base acts as a small signal control element to control the current flow through the Emitter-Collector region. In a BJT array, each of these transistors has its own Base-Emissive control terminal. If the Base voltage is raised above the emitter voltage, then the transistor will be switched on and current will flow through the Emitter-Collector region.

The PMP4201G,135 utilizes BJTs of the 2N2222A type which contain both NPN and PNP transistors. This allows the device to be used in both discrete and integrated circuits depending on the design requirements. Additionally, this device is capable of handling currents up to 300mA, when operating at 40V, which makes it ideal for use in power circuits. Furthermore, it has a high breakdown of 60V, making it suitable for use in high voltage applications.

The PMP4201G,135 is an excellent choice for applications that require a robust solution at an affordable cost. Moreover, the device is extremely reliable since it consists of 2N2222A BJTs, which are known for their long life and high operating temperature range. Therefore, it is not surprising that this device is widely used in a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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