PMP4201V,115 Allicdata Electronics
Allicdata Part #:

1727-5850-2-ND

Manufacturer Part#:

PMP4201V,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN 45V 0.1A SOT666
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matche...
DataSheet: PMP4201V,115 datasheetPMP4201V,115 Datasheet/PDF
Quantity: 4000
4000 +: $ 0.09148
8000 +: $ 0.08593
12000 +: $ 0.08039
28000 +: $ 0.07374
Stock 4000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Base Part Number: PMP4201
Description

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Transistors are widely used in modern electronics and form the foundation of many circuits. PMP4201V,115 is a npn bipolar junction transistor (BJT) having an array structure. BJTs are the most common type of transistors used in general application. In this article we will discuss the application field and working principle of PJM4201V,115.

The PMP4201V,115 is a npn transistor with a high current gain, making it suitable for applications where large currents must be supplied. It can be used in power amplifiers, voltage regulators, switching circuits, and other medium-power responsive applications. The transistor also features a low-voltage drop, making it suitable for use in low-voltage applications.

The PMP4201V,115 has an array structure. A BJT array consists of two transistors connected in parallel with their emitters connected together, and their collectors and bases connected together. This configuration produces a larger current gain than a single transistor, allowing for higher output power. This type of transistor also has improved thermal stability, and can operate at temperatures up to 110°C.

The PMP4201V,115 has an array of two transistors connected in parallel, using either a p-type or n-type material as its substrate. The transistors are connected in series, and their collector is connected to the base of the other transistor. The emitter of each transistor is connected to the emitter of the other, and their bases are connected together. When a current is applied to the base of one of the transistors, it starts to flow through the transistors in the array, and a voltage is applied across the two collector and base connections.

The current flowing through the transistors creates an electric field, which deflects the electrons from the source and the drain of the transistors, creating a potential difference between them. This potential difference can then be used to control the current flow in the circuit. This is the basis of the BJT’s current gain, as the current flowing through the circuit is increased by the voltage applied. The PMP4201V,115 has a current gain of 200 to 300.

The PMP4201V,115 has many uses in electronics. It can be used in switching circuits and power amplifiers, where it provides high current gains and power outputs. It can also be used in voltage regulators, where it can provide a steady output voltage. In addition, it can be used in circuits related to sensing, or for establishing contact between two points. It is also suitable for use in low-voltage applications, due to its low-voltage drop.

The PMP4201V,115 provides a high current gain and is suitable for use in many applications. It has an array structure, and can be used in high-power applications such as amplifiers and switching circuits. It can also be used for creating contact between two points, or for sensing. Its low-voltage drop makes it ideal for use in low-voltage applications as well.

The specific data is subject to PDF, and the above content is for reference

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