PMST2369,135

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 10mA, 1V
Power - Max:	200mW
Frequency - Transition:	500MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	PMST2369

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PMST2369,135 is a type of bipolar transistors, also known as BJTs, which stands for "Bipolar Junction Transistors". The transistor is a three layer semiconductor device consisting of two p-n junctions with a common junction between them. These transistors are typically used in switching circuits, and they are also used in power amplifiers, power converters, signal shaping, and other applications.The PMST2369,135 is a single collector bipolar transistor, which has one collector, two emitters, and one gate. It has a maximum collector-emitter voltage rating of 6.2 V, a maximum gate-emitter voltage rating of 6 V, and a maximum collector current rating of up to 1.38 A. The transistor has an operating temperature range from - 55 C to 150 C.The transistor is constructed using an internal diffusion process, which allows for a higher temperature coefficient of gain and a lower temperature coefficient of collector leakage current. This process also helps to reduce the saturation voltage of the transistor and improves its switching speed. The transistor also has a low collector-emitter capacitance, which helps to reduce its switching losses.PMST2369,135 has a wide range of possible applications, including amplification and switching. In switching applications, the PMST2369,135 transistors can be used as an electronic switch, which can be used to control other electrical components or circuits. In amplifier applications, the PMST2369,135 can be used to amplify weak signals, such as radio frequency signals. This can be used to boost signals that are too weak to be received by the receiving device.PMST2369,135 has a basic operating principle, which is based on the concept of field effect. A voltage applied to the base-emitter junction will cause an electric field to develop and will cause current to flow through the collector-emitter path when the voltage is greater than the base-emitter junction breakdown voltage. The current through the collector-emitter path is proportional to the voltage applied at the base-emitter junction, ensuring the current remains constant when the voltage increases.In amplifier applications, the PMST2369,135 can be used to amplify weak signals, such as radio frequency signals. This can be used to boost signals that are too weak to be received by the receiving device. In switching applications, the PMST2369,135 transistors can be used as an electronic switch, which can be used to control other electrical components or circuits. Additionally, the transistors can also be used in amplifier and oscillator circuits, as well as in active filtering applications.PMST2369,135 is a versatile bipolar transistor that can be used in many different applications. It has a high voltage rating and can be used in switching and amplifier circuits, as well as active filtering applications. Additionally, the transistor\'s internal diffusion process helps to reduce its saturation voltage and improve its switching speed. This makes it an ideal choice for applications requiring high voltage and speed.

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