PMST3906,135 Allicdata Electronics
Allicdata Part #:

PMST3906,135-ND

Manufacturer Part#:

PMST3906,135

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 40V 0.2A SOT323
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200m...
DataSheet: PMST3906,135 datasheetPMST3906,135 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01755
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PMST3906
Description

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The PMST3906,135 is a common base Bipolar Junction Transistor (BJT) with an NPN (Negative, Positive, Negative) configuration. It has a low collector-to-emitter voltage, making it suitable for applications where low power output is required. The PMST3906,135 has a maximum collector current of 350mA, a maximum collector-emitter voltage of 40V, and a maximum power dissipation of 200mW.

The PMST3906,135 is primarily used in low power applications such as audio amplifiers and portable CD players. Being an NPN configuration, the PMST3906,135 is used in switch circuits and drive circuits, along with other low power, low voltage applications. It can be used to amplify and switch small signals typically found in consumer electronic devices. Due to its low power consumption and low voltage ratings, the PMST3906,135 is also well suited for use in automotive electronics.

The working principle of the PMST3906,135 is based on the relationship between the voltage bias and current flow of a transistor\'s base-emitter junction, also known as the "transistor action". When a small base current flows into the transistor\'s base, a much larger collector-emitter current is generated. This current is then used to drive the load connected to the collector of the transistor. As the collector current is increased, the collector-emitter voltage drops, which is why the PMST3906,135 has a relatively low collector-emitter voltage.

The PMST3906,135 can be used in either an active or passive configuration. In the active configuration, the base current is supplied externally, while in the passive configuration, the base current is generated internally. The advantage of the passive configuration is that it can be used to drive a larger load, while the active configuration can be used to drive a smaller load with higher precision.

The PMST3906,135 has a wide temperature operating range, making it suitable for use in applications where temperatures may fluctuate. It is also well suited for small signal amplification, as its high-frequency response is excellent. Additionally, the PMST3906,135 is highly resistant to reverse-bias leakage, making it suitable for use in applications where event these issues may be present.

In conclusion, the PMST3906,135 is an NPN configuration Bipolar Junction Transistor. It is mainly used in low power applications such as audio amplifiers and portable CD players, as well as in automotive electronics. It can be used in either an active or passive configuration and has a wide temperature operating range. Additionally, the PMST3906,135 has excellent high-frequency response and is highly resistant to reverse-bias leakage.

The specific data is subject to PDF, and the above content is for reference

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