PN200A_D26Z Allicdata Electronics
Allicdata Part #:

PN200A_D26Z-ND

Manufacturer Part#:

PN200A_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 500mA 250MHz 625m...
DataSheet: PN200A_D26Z datasheetPN200A_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PN200
Description

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PN200A_D26Z is a type of bipolar junction transistor (BJT), more specifically classified as a single transistor. It is a three-terminal device, depending on the current flow between the base and the collector for functioning. Apart from its standard application, its various features have allowed this particular device to be used in a number of applications.

PN200A_D26Z is mainly used in amplifier circuits, as its properties allow it to amplify the current and voltage signals put through the circuit. It is useful in the design of amplifiers, as the gain of the transistor can be adjusted by changing the resistor value or the base current. In addition, the transistor can be used in oscillators, providing it is supplied with the right conditions. When used in digital circuits, its collector current usually serves as the output voltage.

The most important characteristic of the PN200A_D26Z transistor is its low noise. Noise is undesirable in many applications, and so this low-noise feature is advantageous in having a noise-free output. It also has a maximum collector-base voltage of 400V, allowing its use in high-voltage applications. The high breakdown voltage also makes it suitable for applications such as solar cell inverters and power amplifiers, providing a buffer between the input and output sections.

PN200A_D26Z also has a decent gain-bandwidth product, which makes it suitable for high-speed applications. This allows it to switch quickly, making it useful in speed-critical applications such as analog-to-digital converters. Additionally, the collector current of the device is relatively low, making it useful in low-power applications.

The PN200A_D26Z transistor\'s working principle is relatively simple. When the base of the transistor is forward-biased, a current flows between the base and the collector. This current is amplified by the collector current, resulting in an amplified output from the device. This output is then used in applications in which the amplified signal is required.

To conclude, the PN200A_D26Z is a single-transistor bipolar junction transistor that has a wide range of applications. Its low-noise feature is an important characteristic, and its gain-bandwidth product and collector current make it suitable for high-speed and low-power applications. Finally, its working principle is relatively straightforward and results in an amplified output.

The specific data is subject to PDF, and the above content is for reference

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