PN200A_J18Z Allicdata Electronics
Allicdata Part #:

PN200A_J18Z-ND

Manufacturer Part#:

PN200A_J18Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 500mA 250MHz 625m...
DataSheet: PN200A_J18Z datasheetPN200A_J18Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: PN200
Description

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PN200A_J18Z transistors are a type of bipolar junction transistors (BJTs) known as single transistors. Bipolar junction transistors utilize a three-terminal semiconductor device with two junctions, composed of a normally “off” P-type semiconductor and an “on” N-type semiconductor. At each junction, one side will be made of P-type and the other side will be made of N-type. In this type of transistor, current is controlled by the voltage that is applied between the base and the emitter.

PN200A_J18Z transistors are often used in applications that require linear amplification and digital switching. These transistors are excellent choice for analog and digital level shift applications, where low VBE (volts base-emitter) is required. As a single transistor, this device consists of a P-type base and emitter and an N-type collector. The collector is connected to the emitter by a single wire, which is the basis for the single transistor designation.

The working principle of a PN200A_J18Z transistor is based on the operation of a transistor as a current amplifier. This transistor works by having a small input signal current (which is applied between the base and emitter) control a larger output current that flows between the collector and emitter terminals. In this way, the PN200A_J18Z can act as an amplifier, sensor, switch, or other interface component. It also has a wide range of use in many analog and digital amplifiers and circuits.

The base-emitter junction of the PN200A_J18Z is reverse-biased, meaning that when no current is applied, there is no voltage across the junction. When a small current is applied to the base, a larger output current flows and the base-emitter junction is said to be forward-biased. As the collector current increases, the emitter current also increases, resulting in a voltage drop across the collector-emitter terminals, resulting in an amplified output.

The PN200A_J18Z is a very popular type of single transistor and is used in many different applications. It has many different uses in applications such as amplifiers, oscillators, composite circuits, and power supplies. It is also a very cost-effective transistor that offers reliable performance in many wide-ranging applications. With its low VBE, this transistor is an ideal choice for high-precision applications where extremely precise voltages must be measured.

In summary, the PN200A_J18Z is a single transistor that can be used for a wide variety of linear amplification and digital switching applications. It utilizes a three-terminal semiconductor device consisting of two P-type and one N-type junctions. When a small current is applied to the base of the transistor, it amplifies the current and controls a larger output current between the collector and emitter terminals. This transistor is used in many analog and digital circuits, and is an excellent choice for high-precision applications requiring reliability and accuracy.

The specific data is subject to PDF, and the above content is for reference

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