PQMD12Z Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1479-2-ND |
Manufacturer Part#: |
PQMD12Z |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN/PNP PREBIAS 0.35W 6DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | PQMD12Z Datasheet/PDF |
Quantity: | 10000 |
5000 +: | $ 0.05477 |
10000 +: | $ 0.04993 |
25000 +: | $ 0.04671 |
50000 +: | $ 0.04295 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 230MHz, 180MHz |
Power - Max: | 350mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN Exposed Pad |
Supplier Device Package: | DFN1010B-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PQMD12Z is an array of pre-biased transistor processors that are used for an array of applications. These can be used to control voltages and currents, to amplify signals, and to switch loads. It is an array of low voltage transistors, designed to operate at an arbitrarily low voltage. This type of transistor is commonly used in many electronic circuits. It is commonly used in analog and digital circuits and is a great solution for applications that require low output voltage, such as power supply regulator circuits. It is also suitable for a variety of data conversions. PQMD12Z is a low power device that can also be used in low power applications.
The working principle of PQMD12Z is based on a combination of a semiconductor junction and resistors. The junction acts as a barrier between the two terminals of the transistor. It provides a resistance path between the two terminals of the transistor, thereby allowing the voltage to be adjusted accordingly. The current through the junction determines the voltage applied to the two terminals.
The junction of a PQMD12Z transistor consists of two conducting layers of semiconductor. The base layer comprises of semiconductor material with a higher doping concentration. The collector layer consists of semiconductor material with a lower doping concentration. Each layer is connected to two resistors. The resistor that is connected to the base is the base resistor and the one connected to the collector is the collector resistor. Both of these resistors can be adjusted to control the current through the junction and the voltage between the collector and the emitter of the transistor.
The base of a PQMD12Z transistor is connected to a voltage source such as a power supply or an electrolytic capacitive device. The base voltage and the resistance of the base resistor determines the voltage at the base of the transistor. The base voltage is the voltage at which the transistor starts to conduct current. The resistance of the base resistor can be adjusted to reduce the voltage at the base of the transistor which in turn reduces the current drawn by the transistor.
The collector of the PQMD12Z transistor is connected to a load such as a lamp, motor, or some other device, and the voltage at the collector is determined by the voltage and the resistance of the collector resistor. The voltage at the collector and the resistance of the collector resistor can be adjusted in order to regulate the current drawn by the load and the voltage applied to the load respectively. The collector resistor is used to control the base-to-emitter voltage (VBE), which is an important parameter that determines the Collector-to-Emitter voltage (VCE) and the Collector-to-Source voltage (VCS).
In summary, PQMD12Z are arrays of pre-biased transistors that can be used for many different applications. They offer the advantage of being able to control the voltage and current, amplify signals, and switch loads. They are low power devices that can be used in many low power applications. Their working principle is based on a combination of semiconductor junctions and resistors that can be adjusted to control the voltages and currents and to switch loads.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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PQMD12Z | Nexperia USA... | 0.06 $ | 10000 | TRANS NPN/PNP PREBIAS 0.3... |
PQMD10Z | Nexperia USA... | 0.04 $ | 1000 | TRANS NPN/PNP RET 6DFNPre... |
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PQMD3Z | Nexperia USA... | 0.04 $ | 1000 | TRANS NPN/PNP RET 6DFNPre... |
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