PT4800E0000F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optical Sensors - Phototransistors are used to convert light signals to electrical signals. The PT4800E0000F is one such device that is frequently used in many applications thanks to its versatile and reliable performance. This article will discuss the application field and working principle of this phototransistor.

The PT4800E0000F is a very useful part for optical sensing applications. It is a Silicon NPN Phototransistor, meaning it is able to detect light with exceptional sensitivity. Its typical uses include motion sensors, proximity detectors, and security systems. It can also be used for sensing applications such as active tag readers. In the case of active tag readers, the phototransistor is used to detect the transmission of RFID tags and, in turn, trigger the appropriate response.

The work of the PT4800E0000F is enabled by its integral capacitor. This capacitor allows the transistors to respond with an increase in base current as light is detected, triggering its own response. This response is typically used to power other devices or to generate current for sensors. The PT4800E0000F is also equipped with reverse-bias protection and radiation-resistant characteristics, which makes it highly reliable in its usage.

The PT4800E0000F has a very sensitive response to light intensity and its relatively small size and weight makes it ideal for use in many environments where size and weight are factors. It is also able to operate in temperature extremes of -40°C to +125°C. This makes it suitable for applications in extremely cold or hot environments.

The PT4800E0000F is able to detect light in a wide range of wavelengths, including from visible light down into the infrared range. This is beneficial because even a small change in light intensity is enough to trigger the response of the transistor. The phototransistor is also very resistant to reverberations, meaning it is not affected by other pulses in the vicinity.

This phototransistor is constructed with an integrated suppressor diode and a low-cost epoxy package that prevents damage from rapid temperature changes. Its collector current is rated at 10 mA and its peak collector–emitter voltage is rated at 40V. Its total power dissipation is 1.0W and it is able to operate up to a frequency of 1kHz. It is capable of operating within a wide range of collector–emitter voltages, from 10V to 40V.

In conclusion, the PT4800E0000F is an excellent choice for a variety of applications. It is a simple device that is sensitive to changes in light intensity, and it is able to resist reverberations and operate in temperature extremes. It provides accurate measurements in a range of wavelengths, and its construction prevents damage from sudden temperature changes. The low cost of this phototransistor makes it a cost-effective and reliable solution for sensing applications.

The specific data is subject to PDF, and the above content is for reference