Allicdata Part #: | 425-2379-5-ND |
Manufacturer Part#: |
PT480E00000F |
Price: | $ 0.00 |
Product Category: | Sensors, Transducers |
Manufacturer: | Sharp Microelectronics |
Short Description: | PHOTO TRANS CLEAR LEN 800NM SIDE |
More Detail: | Phototransistor 800nm Side View Radial |
DataSheet: | PT480E00000F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tube |
Part Status: | Obsolete |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Current - Collector (Ic) (Max): | 20mA |
Current - Dark (Id) (Max): | 100µA |
Wavelength: | 800nm |
Viewing Angle: | 70° |
Power - Max: | 75mW |
Mounting Type: | Through Hole |
Orientation: | Side View |
Operating Temperature: | -25°C ~ 85°C (TA) |
Package / Case: | Radial |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optical Sensors - Phototransistors make use of a photovoltaic effect to detect light intensity and convert light energy into electrical signals. The PT480E00000F is a particularly notable example of this kind of device, and it is used in a variety of different applications with a range of working principles.
One of the big advantages associated with the PT480E00000F is its relative ease of use. The relatively simple construction of the device with two terminals allows for easy mounting and operation. The device itself is a reverse-biased npn-silicon transistor with a glass encapsulated photodiode. The device is particularly immune to EMI and RFI interference, so it can be used in a wide variety of environments.
The PT480E00000F is used across a wide range of application fields. One particular area of use is in the field of measurement, where the device can be used to measure light intensity. It can also be used in remote sensing for data collection. The device can also be used in automation processes, where it is used to detect the presence of objects. There are also a number of applications in the medical and industrial sectors, such as the detection of medical substances or the identification of solids and liquids.
The working principle of the PT480E00000F is based on the photovoltaic effect. This is the phenomenon whereby photons from a light source are absorbed by a semiconductor material, which then produces electrical current. The phototransistor consists of a photodetector, typically a photodiode, that is connected to a traditional npn transistor. The photodiode is usually contained within a glass package that protects it from dust and other environmental conditions.
When the device is exposed to the light, electrons are generated by the photodiode. These electrons then pass through the base region of the transistor, and are then collected by the collector region. This charge flows through the collector, and is converted into current. This current is then passed through the device, and can be detected and measured.
The device is popular due to its sensitivity and accuracies. It can detect very small amounts of light, while producing a large current. It can also be used for long distances, since the device is immune to EMI and RFI interference. The device is also highly efficient, as it is able to convert up to 99.5% of the light into electrical current.
In conclusion, the PT480E00000F is an excellent example of an optical sensor - phototransistors. The device is popular due to its relative ease of use and its wide range of application fields. The working principle of the device is based on the photovoltaic effect, which enables it to generate currents from light exposure. The device is also highly efficient, and is able to detect very small amounts of light while producing large current outputs.
The specific data is subject to PDF, and the above content is for reference
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