PTV5.1B-M3/84A Allicdata Electronics
Allicdata Part #:

PTV5.1B-M3/84A-ND

Manufacturer Part#:

PTV5.1B-M3/84A

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 5.4V 600MW DO220AA
More Detail: Zener Diode 5.4V 600mW ±6% Surface Mount DO-220AA ...
DataSheet: PTV5.1B-M3/84A datasheetPTV5.1B-M3/84A Datasheet/PDF
Quantity: 1000
6000 +: $ 0.05623
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.4V
Tolerance: ±6%
Power - Max: 600mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 20µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Description

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The PTV5.1B-M3/84A is a single zener diode, commonly used for applications such as voltage regulation, over-voltage protection, reverse polarity protection, and transient suppression. It is a low voltage silicon zener diode, designed to provide a guaranteed power dissipation of 5.1 watts, with a breakdown voltage range of 7.8 to 8.2 volts. It is capable of suppressing transients up to 1400W (10/1000 μs), with a maximum reverse current of 0.50mA.

The PTV5.1B-M3/84A is useful in protecting sensitive components from voltage transients while still allowing required currents to pass. It can be used to stabilize voltages that have the potential to exceed normal circuit parameters and cause damage. It is also used in select DC-DC converters, as well as voltage regulating applications.

The working principle of a zener diode is based on the property of electrons to migrate from the conduction band of a semiconductor to the valence band when exposed to a higher voltage. Electrons then combine with holes in the valence band, releasing energy. As a result, a number of electrons will become trapped and new electrons will be released. This creates an imbalance in the charge carriers, resulting in a potential barrier. The voltage generated across this barrier is known as the breakdown voltage.

When the diode is placed in forward bias, the PTV5.1B-M3/84A allows current to flow, up to the specification limit. When the voltage exceeds the specification limit, the diode will break down and the current will flow in reverse through the diode. This allows for the protection of sensitive circuitry, as the current flow is limited due to the voltage limitation.The PTV5.1B-M3/84A also features multiple heat-dissipation mechanisms, allowing the diode to remain operational and safe. For example, during reverse bias, the diode can dissipate up to 4W of heat in order to prevent thermal runaway. This allows the diode to not only maintain its integrity, but also to protect other circuit elements.

In conclusion, the PTV5.1B-M3/84A is a single zener diode, designed to protect sensitive components from voltage transients while allowing certain currents to pass. It features a breakdown voltage range of 7.8 to 8.2 volts, a guaranteed power dissipation of 5.1 watts, and a maximum reverse current of 0.50mA. It is commonly used for applications such as voltage regulation, over-voltage protection, reverse polarity protection, and transient suppression.

The specific data is subject to PDF, and the above content is for reference

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