PTV5.1B-M3/85A Allicdata Electronics
Allicdata Part #:

PTV5.1B-M3/85A-ND

Manufacturer Part#:

PTV5.1B-M3/85A

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 5.4V 600MW DO220AA
More Detail: Zener Diode 5.4V 600mW ±6% Surface Mount DO-220AA ...
DataSheet: PTV5.1B-M3/85A datasheetPTV5.1B-M3/85A Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05127
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.4V
Tolerance: ±6%
Power - Max: 600mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 20µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PTV5.1B-M3/85A is one of the latest in a range of single Zener diodes. It is widely used in a range of applications, ranging from power regulation to signal steering. The unique design of this device provides excellent performance in a variety of applications.

In terms of power regulation, the PTV5.1B-M3/85A can be used to regulate the voltage by blocking the higher power current. This prevents overvoltage and damage to components. The device has a wide range of operating voltages, with a peak rating of 81 V. This provides effective power regulation in applications with significant load variations.

In addition to its ability to regulate power, the PTV5.1B-M3/85A can also be used to control signals. This device has a high speed switching time, which is crucial for signal steering applications. The device can also be used to limit the current in circuits, which is important in many types of circuits. The device also has a high resistance to ESD, which makes it ideal for use in sensitive components.

The PTV5.1B-M3/85A device is constructed using a planar high voltage silicon-germanium process. This process allows the device to have a very low breakdown voltage and high stability. The device can also be used in very small packages, allowing it to fit into tight spaces.

In addition to its performance characteristics, the PTV5.1B-M3/85A is also produced at a very affordable price. This makes it ideal for a range of applications. Furthermore, the device has a high reliability and long lifetime, making it suitable for use in heavily loaded and demanding applications.

The working principle of the PTV5.1B-M3/85A is fairly straightforward. When the voltage across the diode reaches the threshold voltage, the current passing through it is limited. This protection is achieved by limiting the flow of electrons passing through the junction of the diode. This process ensures that power regulation is maintained and the voltage is limited to prevent any damage that could be caused by overvoltage.

The PTV5.1B-M3/85A is a very useful device, which can be used in a variety of applications. Its combination of performance and affordability make it an attractive option for both power regulation and signal steering applications. Its high speed switching time, high resistance to ESD, and small package make it an excellent choice for use in sensitive components. Furthermore, its low breakdown voltage and high stability ensure that the device will continue to work reliably for many years.

The specific data is subject to PDF, and the above content is for reference

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