PUMF11,115 Allicdata Electronics

PUMF11,115 Discrete Semiconductor Products

Allicdata Part #:

1727-2417-2-ND

Manufacturer Part#:

PUMF11,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN PREBIAS/PNP 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: PUMF11,115 datasheetPUMF11,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06861
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 100MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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Bipolar Junction Transistor (BJT) Arrays are composed of several transistors and can be used to switch and amplify an electric signal. The PUMF11,115 is an example of such an array; used to amplify and switch both bipolar and unipolar signals. Made by Surface Mount Technology, it is designed to operate in a wide range of applications.

The PUMF11,115 is composed of four separate transistors, each with its own emitter, base and collector. Each of these transistors can be independently biased, enabling them to be used for a variety of different functions. The PUMF11,115 is well suited for applications that require multiple transistors working in parallel, such as motor control, relay switching and power sequencing.

The PUMF11,115 is a pre-biased BJT array, which means that all four transistors are biased when the device is powered on. The bias settings of each transistor can be easily adjusted by changing the signal applied to either the base or the collector. This enables the user to fine-tune the performance of the array to meet their application’s needs.

The operation of the PUMF11,115 can be further attributed to its ability to both amplify and switch signals. The transistors in the array can be used to both amplify a signal (as an amplifier transistor) and to switch the signal (as a switch transistor). When used as an amplifier transistor, the transistor receives a small input signal, amplifies it, and outputs a larger signal. When used as a switch transistor, the transistor receives a signal and either allows it to pass through for further amplification, or cuts it off entirely.

The PUMF11,115 is also designed to operate over a wide range of temperatures. This allows the device to be used in a range of applications that require components that can handle extreme temperatures, such as automotive and aerospace applications. The device is also designed to be robust and resistant to electrical noise, making it suitable for use in high-voltage and high-frequency applications.

The PUMF11,115 is a versatile and reliable BJT array that can be used in a variety of different applications. Its ability to both amplify and switch signals makes it well suited for applications that require multiple transistors working in parallel. Additionally, its wide range of temperature operation and noise resistance make it suitable for high-voltage and high-frequency applications, as well as those requiring extreme temperatures. The pre-biased design of the PUMF11,115 also enables easy fine-tuning, enabling the user to optimize the performance of the array for their application.

The specific data is subject to PDF, and the above content is for reference

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