PVR100AZ-B2V5,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN + Zener
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	550mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	PVR100A

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PVR100AZ-B2V5,115 Application Field and Working Principle

PVR100AZ-B2V5,115 is a NPN Silicon Bipolar Junction Transistor (BJT) manufactured by Central Semiconductor. It is a discrete two-terminal device which uses either direct current or alternating current and is used in many different electrical circuits. The transistor is a three-layer device consisting of two junctions, which are commonly referred to as the emitter and collector. This type of transistor is useful in many applications and is often used as an amplifier and switch, depending on the biasing of the device. The transistor is also known as a current control device because it is capable of controlling a current and the gain of this current. For example, the transistor can be used as a switch for controlling the flow of current, such as in the formation of an oscillator or a power amplifier. Additionally, the transistor can also be used as an amplifier, which can either increase the current or decrease it. In terms of its application field, PVR100AZ-B2V5,115 can be used in various applications such as industrial control, consumer electronics, low-voltage circuits, power-supply, radio systems, and automotive electronics. The transistor works on the principle of the injection of minority carriers. This is achieved when there is a small amount of electrons in the emitter that gains sufficient energy to pass through the base-collector junction. This current then flows through the collector terminal and produces the corresponding output current. The current gain of the transistor can be adjusted by controlling the biasing of the transistor. This is done by connecting a bias voltage to the emitter terminal and to the base terminal. When the emitter voltage is visible due to the injected minority carriers, the current gain increases and vice versa when the emitter voltage is too low. This can be used to generate a particular range of output signals by optimizing the electrical performance of the transistor. The most important parameter of the transistor is the breakdown voltage. This parameter is specified in the datasheet of this device and it determines the maximum voltage at which the current gain of the transistor will start to decline. This is due to the temperature rise of the base junction, which might reduce the conduction of minority carriers and affect the performance of the device. PVR100AZ-B2V5,115 is a reliable and efficient transistor, which exhibits very good electrical properties such as high current gain, low on-state resistance, and high breakdown voltage. This makes it an ideal choice for many applications requiring amplification and switching.

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