PX3511ADAG-R3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Power Metal-Oxide-Semiconductor (MOS) FETs and insulated Gate Bipolar Transistors (IGBTs) are widely used in many form factors and operations ranging from consumer electronics to industrial applications. Within their scope of application, gate drivers are a key component necessary to give the output stage the high-voltage, high-speed capability required to operate such devices. The PX3511ADAG-R3 dual FAULT-PROTECTION gate driver is a specialized, high-efficiency device designed to address the specific requirements of power MOSFET and IGBT gates.

The PX3511ADAG-R3 is suitable for applications that require high-speed voltage and current operation up to 65V and 1.5A steady state, and up to 10A peak current. Its flexible design enables it to accommodate any MOSFET or IGBT breaking capacity from 1kHz to more than 100kHz, depending on the specific device. The PX3511ADAG-R3 features three distinct operating modes for improved fault protection (standard, enhanced, and remote), allowing users to select the level of protection needed for their application.

Working Principle
The operating principle of the PX3511ADAG-R3 is based on the use of a pair of independent MOSFETs as the output stage. A charge pump voltage supply provides the necessary gate voltage while a floating MOSFET receives a drive signal from the main PX3511ADAG-R3 system. This signal is fed to the floating MOSFET’s gate, which, in turn, controls the source and gate voltages of the two output MOSFETs. In effect, the PX3511ADAG-R3 comprises three independent power switches that allow for high voltage and high-current operation.

The PX3511ADAG-R3 is designed to provide high-efficiency and reliable gate control to both low- and high-side power MOSFETs and IGBTs. Its push-pull operation, with fast PWM rise and fall times, allows for the rapid switching of power levels up to 65V. Furthermore, the device implements an advanced under-voltage lockout protection for improved system performance. This protection measures the drain-source voltage of the power device and is applied whenever the voltage drops below a pre-defined threshold level.

Application Field
The PX3511ADAG-R3 dual FAULT-PROTECTION gate driver is a specialized high-efficiency device ideally suited for a wide range of applications. Its low profile design and small 10mm x 10mm footprint make it suitable for applications with tight space requirements. Additionally, its flexible design enables it to accommodate any power MOSFET or IGBT breaking capacity from 1kHz to more than 100kHz. It is suitable for applications that require high-speed voltage and current operation up to 65V and 1.5A steady state, and up to 10A peak current.

The PX3511ADAG-R3 is heavily used in switch-mode power supplies, DC-DC converters, motor drivers, brushless DC motor control, H-bridge and three-phase bridge drivers, and other power management applications. It is also suitable for automated test and measurement systems, LED lighting, industrial drives, and general purpose IGBT gate drive applications. It is compatible with a variety of power devices such as high-voltage MOSFETs and IGBTs, low-voltage MOSFETs, and low-voltage IGBTs.

The PX3511ADAG-R3 is an advanced gate driver offering a wide range of capabilities and features. Its flexible design, multiple operating modes, and integrated fault protection features make it suitable for a variety of demanding power applications. Its small size and low power consumption make it ideal for deployment in portable and space-constrained devices. Furthermore, its high-efficiency operation makes it an ideal choice for high-speed IGBT and power MOSFET gate drive. The PX3511ADAG-R3 is an excellent solution for applications requiring reliable high-speed gate drive.

The specific data is subject to PDF, and the above content is for reference