Allicdata Part #: | PZ28F032M29EWBA-ND |
Manufacturer Part#: |
PZ28F032M29EWBA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 32M PARALLEL 48BGA |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral... |
DataSheet: | PZ28F032M29EWBA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 60ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-BGA (6x8) |
Base Part Number: | PZ28F032M29 |
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PZ28F032M29EWBA is a type of memory chip manufactured by Macronix, that is a leader in the design and supply of flash memory, neural network processor and mixed signal products. It is made up of NAND Flash and has 32MB of storage capacity. This chip is designed for use in smart phones, tablets, digital cameras, MP3 players, USB memory, and other consumer electronics.
PZ28F032M29EWBA memory chips are based on the PSRAM (Programmable Static Random Access Memory) architecture, which offers higher densities, greater speed and better cost effectiveness compared to other types of non-volatile memory. It is especially ideal for applications where fast random access memory and low power consumption are paramount. This chip has a 2,5V power supply, a 70MHz clock frequency, 1M cell size and a read/write speed of 75ns. It also features dynamic refresh, burst reads and ECC (Error Correction Code) support.
Some of the main applications for PZ28F032M29EWBA memory chips include audio and video broadcast systems, digital imaging systems, high-speed printers, media streaming, secured access systems, video surveillance systems and 3D video gaming. It is also suitable for use in industrial control, medical instrumentation and general system control purposes.
PZ28F032M29EWBA memory chips use a cell structure, with each cell containing a single memory bit. This bit can be addressed and manipulated individually, allowing data to be stored in it. Each cell also has information about the location of the next cell, allowing data to be retrieved quickly and efficiently. The cell arrangement makes it possible for large amounts of data to be stored in the same memory chip.
When a memory is manufactured, it needs to be tested in order to ensure it is performing correctly. PZ28F032M29EWBA memory chips use a set of tests called Built-in Self Tests (BISTs) during their manufacturing process. These tests are designed to test the chip for errors, such as memory data errors and logic errors. For example, the chip will check if all the cells are connected correctly and if all the data is correct. If a BIST detects an error in the chip, it will generate a fault signal and the chip will fail inspection.
In conclusion, PZ28F032M29EWBA memory chips are well suited to applications that require high density, fast performance, and error-checking capabilities. They are widely used in a range of consumer and industrial applications and are tested during the manufacturing process in order to ensure their performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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