PZ28F064M29EWHX

Memory: PZ28F064M29EWHX Application Field and Working Principle

The PZ28F064M29EWHX is a high-density non-volatile memory device, an NVM, offered by Microchip Technology. This high-density memory is often used in applications where there is a need for a large amount of data storage. The device can store up to 8192 bytes of data, which is enough for most applications.

The PZ28F064M29EWHX is a 16-pin DIP (dual in-line package) integrated circuit. It consists of two components: the NVM and the control logic. The NVM consists of two parts, the main block and the main register array. The main block contains the write and read logic, address decode logic, self-timing generation logic, and Status/Control Register. The main register array contains 8K words (32 bits wide). Each word can be placed in either volatile storage (VSRAM) or non-volatile storage (NVSRAM).

The control logic is the second part of the device. It takes care of access granting, resetting, and read/write logic. It consists of a GAL (Generic Array Logic) element and a Static RAM (SRAM) element. The GAL element is responsible for allowing access to the PZ28F064M29EWHX memory array and to the write/read logic. The SRAM element contains the memory array and the control logic for the read/write operations.

The PZ28F064M29EWHX is designed for applications in which a large amount of data needs to be stored in a very small space. This device can be used in a variety of embedded applications such as automotive applications, industrial applications, automotive infotainment systems, and home automation systems. The device can also be used in security applications, such as in smart cards for secure authentication, access control, and cryptography. It can also be used for data collection and logging applications.

Working Principle

The working principle of the PZ28F064M29EWHX non-volatile memory device is based on a process called “floating gate programming”. This process can be used to store data in the memory array. In this process, electrons are transferred into and out of a floating gate that is located between the control logic and the NVM. When electrons are transferred, they create an electrical potential that is used to store data.

The write/read logic in the device is responsible for sending the electrons to the floating gate and for retrieving them. The write/read logic can be triggered by a voltage source, usually the in-circuit voltage regulator. The voltage source is responsible for providing the correct voltage to the write/read logic and for disabling the write/read logic when necessary. The write/read logic is also capable of executing self-timing logic, which ensures that the memory array is updated accurately.

The PZ28F064M29EWHX is a simple, low power consumption, and cost-effective solution for many data-related applications. Its low power consumption and small form factor make it an ideal choice for a variety of applications. The device is reliable and delivers excellent performance when used correctly.