PZ28F032M29EWTA

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	60ns
Access Time:	60ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-VFBGA
Supplier Device Package:	48-BGA (6x8)
Base Part Number:	PZ28F032M29

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PZ28F032M29EWTA Application Field and Working Principle

Introduction to Memory

Memory is often referred to as Primary Memory or Main Memory. It is where the operating system, application programs, and data in current use are kept. It is usually internal to the computer and is often referred to as RAM or Random Access Memory. It is a volatile memory, meaning it will be cleared or reset when the power to the computer is turned off.

PZ28F032M29EWTA

PZ28F032M29EWTA is a 32-megabit (4 Mbytes) NAND Flash memory organized as 4,096 pages × 1,024 bytes per page, with two spare bytes available for each page and 32K dedicated pages for bad block. This memory device is fabricated using Toshiba’s third generation NAND technology, which is known as the Multi-Level Cell (MLC) Flash technology that stores multiple electric charge levels per memory cell, and therefore more data, than conventional single-level cell (SLC) Flash memory.

Applications of PZ28F032M29EWTA

PZ28F032M29EWTA is an ideal choice for embedded applications needing a high degree of data storage combined with low power consumption. Examples of these applications include digital cameras, digital video cameras, mobile phones, PDAs, portable media players, and others. The NAND Flash technology of the PZ28F032M29EWTA uses a multi-level cell (MLC) architecture to achieve a high density of 32 megabit, which leads to a need for improved user interface management.

Working Principle of PZ28F032M29EWTA

In order to make the best use of PZ28F032M29EWTA, it is important to understand its working principle. The NAND Flash memory uses a multi-level cell (MLC) architecture in order to provide a high degree of data storage. It consists of four memory cells in a single storage unit. Each memory cell in the PZ28F032M29EWTA can store two bits of data for a total of 8 bits per storage unit. In order to read or write data, the PZ28F032M29EWTA uses an internal buffer first. To read data, the device stores the requested data in its internal buffer, while to write data, the device will retrieve a similar data set from its internal buffer. The advantage of this approach is that the whole operation is much faster, since the data can be accessed directly from its internal buffer. The working mechanism of the PZ28F032M29EWTA also includes error correction coding (ECC). ECC is a way of identifying errors in the data and correcting them in order to improve the accuracy of the data being read and written. Finally, it is worth mentioning the wear-leveling algorithm that is included in the design of the PZ28F032M29EWTA. The wear-leveling algorithm ensures that no single memory cell in the device is written or read more often than others. This helps to evenly distribute the wear over the cells in the device, thus increasing its lifetime.

Conclusion

In this article we discussed the PZ28F032M29EWTA device. It is a 32-megabit NAND Flash memory device with a multi-level cell (MLC) architecture and a need for improved user interface management. We looked at its applications in embedded devices, such as digital cameras, digital video cameras, mobile phones, PDAs, and portable media players. Additionally, we delved into its working principle, including the internal buffer, the error correction coding (ECC), and the wear-leveling algorithm. All of these factors make the PZ28F032M29EWTA a great choice for embedded applications needing a high degree of data storage combined with low power consumption.

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