QFET-3008-TR2G

Series:	*
Part Status:	Obsolete

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF AmplifiersThe QFET-3008-TR2G is a radio frequency (RF) amplifier device that is capable of providing high frequency signal amplification while exhibiting low thermal resistance characteristics. It is designed to provide gain and power amplification of signals thereof, and various other purposes.This device is designed for use in a variety of applications, such as terrestrial and satellite communications systems, multimedia-broadband communication systems, and for other high frequency purposes. It features superior gain linearity, a low noise threshold, and a very wide dynamic range. Its output and its high power capacity enable it to be used for both transmitters and receivers.The main principle of the QFET-3008-TR2G involves a type-compatible bipolar junction transistor (IPT03814PNP) configured in a bridge amplifying circuit. It is composed of several integrated active parts, such as an input stage for signal processing, an output stage for signal amplification, and a driver stage for providing power amplifying capabilities. Each of these elements form integral part of this device which ensures that all the gain and power amplification processes are harmoniously combined.The QFET-3008-TR2G also features a positive feedback loop which enables the device to monitor its own output. This feature provides excellent voltage stability under a wide range of signal conditions, thus ensuring that the device remains at a constant gain and output power.From a design standpoint, the QFET-3008-TR2G also has wide temperature stability and low leakage. It is designed to remain stable and reliable under a wide range of temperatures, thus making it suitable for applications that require precision and robust performance.In addition, the QFET-3008-TR2G also features low thermal resistance, meaning that it eliminates the issue of excessive device heat dissipation. This makes it highly suitable for applications that need high temperature devices and efficient cooling.Finally, the QFET-3008-TR2G has an extremely low noise figure of 1dB, which confirms its low-noise operation characteristics. This feature allows the device to deliver high quality output without introducing any unwanted noise.In sum, the QFET-3008-TR2G is an ideal RF amplifier device for a variety of applications where high frequency signal amplification and low thermal resistance are required. It is a versatile device, capable of delivering precision gain and power amplification, and providing excellent temperature stability and noise reduction.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description