Allicdata Part #: | QFET-3018-TR1G-ND |
Manufacturer Part#: |
QFET-3018-TR1G |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | Broadcom Limited |
Short Description: | IC POWER AMP |
More Detail: | N/A |
DataSheet: | QFET-3018-TR1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | * |
Part Status: | Obsolete |
Description
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Disclaimer:
This article contains the views of the author and is not intended as a substitute for professional advice. The author’s opinions expressed herein are his own personal views and do not necessarily reflect the opinions of any organizations or institutions with which he has been associated.
QFET-3018-TR1G are ultra-wideband low noise amplifiers designed for use in various communications systems. They are primarily used in wireless communications receivers, especially those where wideband reception is desired. QFET-3018-TR1G amplifiers are designed to amplify small radio frequency signals over a wide range of frequencies. They are designed to reduce noise in order to improve reception of the desired signal.The wide frequency range of these amplifiers makes them ideal for various wireless communications systems, including WLAN, 2.4 GHz Bluetooth, and UMTS. They are also used for digital satellite broadcast, television, and other data transmission. The QFET-3018-TR1G is a fully integrated solution, which includes an amplifying transistor, an input matching network, an output matching network, and a reverse-active bias pairing network. These components are designed to ensure optimal compensation for a wide range of input frequencies.The amplifying transistor of the QFET-3018-TR1G is an MOSFET N-type amplifier. This type of amplifier is designed to provide high gain and low noise. The amplifier has an operating voltage range of 2.1 – 3.6V and a drain/source breakdown voltage of 20V. It has a maximum gain of 20dB.The input matching network consists of two linear resistors and two capacitors, which are capable of compensating for the various input frequencies. The output matching network consists of one linear resistor and three capacitors. These components are designed to match the output impedance of the amplifying transistor to the load impedance. The reverse-active bias pairing network is designed to mitigate the noise introduced by the other components in the amplifier. The reverse-active bias pairing network consists of four transistors connected in a common emitter configuration, as well as two capacitors and two resistors. The transistors act as active bias elements which can adjust the bias current of the amplifying transistor.Overall, the QFET-3018-TR1G is an excellent choice for wideband radio frequency amplifiers. It offers high gain, low noise, and excellent input/output matching. It is suitable for high-band and ultra-wideband applications in wireless communications systems.This article contains the views of the author and is not intended as a substitute for professional advice. The author’s opinions expressed herein are his own personal views and do not necessarily reflect the opinions of any organizations or institutions with which he has been associated.
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