Allicdata Part #: | QID1210006-ND |
Manufacturer Part#: |
QID1210006 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | MOD IGBT 1200V 100A SPLIT SI/SIC |
More Detail: | IGBT Module 2 Independent 1200V 100A 570W |
DataSheet: | QID1210006 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 570W |
Vce(on) (Max) @ Vge, Ic: | 6.5V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 16nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An insulated gate bipolar transistor, abbreviated as IGBT, is a distinct type of transistor device. It has both advantages and drawbacks compared to other types of transistors but is particularly known for its high power efficiency and low power consumption capabilities. For applications that require switching large amounts of power, IGBT modules are ideal for the job.
IBGTs are widely used in power electronic applications such as motor drives, industrial automation, solar, wind, and renewable energy systems, motor drives, lighting, welding, and many other applications. They\'re also used in power conversion in large power supplies and in high-end audio equipment. They\'re very efficient and reliable due to their insulated gate base and the two types of bipolar junction transistors that are incorporated into the IGBT structure.
The underlying technology behind IGBT modules is based on a three-terminal power semiconductor structure that combines two high-performing and well-suited transistor technologies into a single package. These transistors include the insulated gate bipolar transistors (IGBTs) and the metal oxide semiconductor field-effect transistors (MOSFETs). The combination of these transistors provides optimal performance and efficiency as well as advanced features such as protection against excessive currents and protective circuitry against short-circuits.
IGBTs are usually used in medium to high power applications, although they can be used in any application up to their maximum ratings. The basic principle of operation is that when a voltage is applied to the gate and emitter of the transistor, it switches and becomes conductive. This allows current to flow from the source to the drain. When the gate voltage is removed, the transistor turns off and the current stops flowing.
IBGT modules offer a wide range of advantages compared to other types of transistors. They provide high efficiency, low power consumption, low losses and low switching time, and have excellent thermal properties. Additionally, they have a great life expectancy, are simple to use, and provide excellent protection against excessive currents and short-circuits. The packaging of IGBT modules makes them particularly suitable for switching large amounts of power in high-power electronic applications.
IGBT modules are used in a variety of industries, such as aerospace, medical, consumer electronics, and automotive, due to their optimized operating characteristics. Additionally, they are the goto component for the construction of high-power applications that require the proper switch-up and switchdown of high-power currents. In conclusion, IGBT modules are becoming increasingly popular in today\'s high-power electronic devices, due to their many advantages.
The specific data is subject to PDF, and the above content is for reference
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