QID1215003

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Integrated gate-commutated thyristors (IGBTs) are solid-state power devices with a combination of insulated gate bipolar transistor (IGBT) and gate-commutated thyristor (GCT) characteristics. GCTs are able to operate at higher voltage and power levels than traditional thyristors and are the typical switching device of choice in many high power applications. IGBTs have higher switching speeds and higher power capabilities than traditional thyristors. IGBT Modules are designed to provide optimal performance, thermal stability and superior current conduction in high power applications.

IGBT Modules comprise multiple IGBTs connected and housed together within a single package. By utilizing multiple IGBTs in a single package, IGBT Modules are able to significantly increase current capacity compared to individual IGBTs, enabling increased power capabilities and improved reliability. Also, the encapsulation of the IGBTs provides superior protection when compared to discrete components.

One of the most common applications for IGBT Modules is in power switching, such as in AC and DC switchgear and motor drives. AC and DC switchgear, for example, require high current capabilities for safe and robust switching, beyond what is possible with conventional relay thyrisators. IGBT Modules have come to replace thyristors in power converters, allowing for the efficient and safe conversion of AC to DC and DC to AC applications.

In motor drives, IGBT Modules are used in Motion Control and Power Conversion applications. Motion Control applications utilize IGBT Modules as switches to control motors and other actuation devices with high power, fast logic and precise current control. In Power Conversion applications, IGBT Modules are used to convert DC currents to 3-phase AC currents which are used to drive Brushless DC and AC motors. By using multiple IGBTs in a single module, the amount of current that is handled can be much higher than what is possible with a single IGBT.

The working principle of IGBT Modules is simple, yet very efficient. IGBTs are based on the field-effect transistor (FET) MOSFET technology and consist of a three terminal N-channel semiconductor device. When a voltage is applied to the gate terminal of an IGBT, it causes a shift in the transistor’s characteristic, turning the transistor ‘on’ and allowing current to flow through the two other terminals, enabling the efficient transfer of power. IGBT Modules integrate multiple IGBTs into a single package, enabling increased current capability and superior protection.

In conclusion, IGBT Modules are a reliable, cost-effective and efficient technology for applications involving high power switching. The combined characteristics of GCTs and IGBTs enable superior current conduction and improved thermal stability. IGBT Modules are able to provide higher power capabilities as well as improved reliability when compared to discrete components. They offer a safe and efficient solution for power switching in AC and DC switchgear and motor drives. The simple yet effective working principle of IGBTs enables the safe and efficient transfer of power, making IGBT Modules the ideal technology for high power applications.

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