QID1210007 Allicdata Electronics
Allicdata Part #:

QID1210007-ND

Manufacturer Part#:

QID1210007

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: MOD IGBT 1200V 100A
More Detail: IGBT Module 2 Independent 1200V 100A 730W
DataSheet: QID1210007 datasheetQID1210007 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vce(on) (Max) @ Vge, Ic: 6.5V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Series: --
Part Status: Active
IGBT Type: --
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 730W
Description

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An Insulated Gate Bipolar Transistor module (IGBT module) is a power electronic device developed to control the flow of electricity through a component. It consists of several individual IGBTs that are mounted together in a single package, thus making a power transistor module.

An IGBT module is used in a wide range of applications, mainly in high-voltage, high-frequency switching and power conversion systems. Its most common uses are in power supplies and motor drive applications, switch mode power supplies, power control circuits, high voltage choppers, synchronous rectification circuits, and high-power amplifiers. It is widely used in consumer electronics, industrial, automotives, and communication systems.

The working principle of an IGBT module is based on a three-terminal device, and acts as a switch-mode device when used to connect or disconnect power. The IGBT consists of two transistors, the first one being an n-channel insulated gate cell, and the second one being a p-channel MOSFET. When the voltage is applied, the n-channel transistor turns on and the p-channel transistor turns off. This action subsequently controls the flow of electricity.

The IGBT modules can be further divided into two, i.e., power modules and discrete modules. Power modules are used for high-performance applications, and include a variety of power levels, such as high voltage and low voltage, as well as high current and low current. Discrete modules, on the other hand, are typically lower power, and are used in consumer electronics applications. Both modules include two terminals, known as the source and gate terminals. The source terminal is connected to the source power supply and the gate terminal is connected to the control source.

An IGBT module is superior to other power electronic devices, such as thyristors, MOSFETs, and power bipolar transistors, mainly because of its high-frequency and high-speed switching capability. Additionally, it requires only one device for both switching and controlling. Furthermore, IGBT is a highly-reliable device and features an ultra-low figure of merit (FOM) and a much lower on-state resistance when compared to other power devices.

To ensure a safe and reliable operation, an IGBT module must be properly installed, including all the necessary safeguards to protect it from damage or failure. It is also important to follow the manufacturer\'s instructions for proper installation of all components. Proper installation and maintenance will prevent any unnecessary accidents or delays during the operation.

In summary, an IGBT module is a powerful power electronic device used in diverse applications, such as motor drives, power supplies, and switch mode power supplies. With its superior switching capability, ultra-low FOM, and low on-state resistance, the IGBT module provides superior performance and reliability compared to other power electronic devices.

The specific data is subject to PDF, and the above content is for reference

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