Allicdata Part #: | QJD1210011-ND |
Manufacturer Part#: |
QJD1210011 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | MOSFET 2N-CH 1200V 100A SIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A... |
DataSheet: | QJD1210011 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 100A |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10200pF @ 800V |
Power - Max: | 900W |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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QJD1210011 Application Field and Working Principle
The QJD1210011 is a high-density low power consumption CMOS silicon gate array, which is widely used in many fields such as consumer electronics, automotive and telecommunications. It is designed for integrated circuit (IC) and other process-sensitive applications.
The QJD1210011 provides high performance, low power consumption and short lead times. This is achieved by a combination of state-of-the-art manufacturing processes and a unique architecture, which includes field-effect transistors (FETs) and metal-oxide-semiconductor (MOSFET) arrays. The QJD1210011 also utilizes an array of interlocking MOSFETs to reduce leakage and improve device performance.
The gate array of the QJD1210011 consists of an array of transistors, which are grouped into layers, each layer forming a “grid” of connections. The FETs, which form the cores of each layer, are connected by a switching matrix. This matrix allows transistors to be switched from one layer to another in order to form a wide array of circuit topologies.
The FETs of the QJD1210011 are capable of very rapid switching from off to on, and from on to off, which enables them to change their switching states very quickly in response to a signal. This is an important feature for applications such as memory devices and microprocessors, where high speed switching is essential.
In addition, the MOSFETs in the QJD1210011 provide excellent performance and low power consumption when compared to conventional FETs. The MOSFETs have a lower gate capacitance and a shorter time constant compared to conventional FETs.
The QJD1210011 also utilizes an embeddable logic array, which enables the device to process and store data. This data can be then passed to the desired output, depending on the programmed logic. The array also allows for efficient use of the device’s power, since it can be turned on or off depending on the input that it is receiving.
Overall, the QJD1210011 provides an excellent platform for a wide range of applications. Its combination of advanced features, low power consumption, and relatively low cost makes it an attractive choice for designers looking for a highly integrated solution for embedded systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
QJD1210010 | Powerex Inc. | 0.0 $ | 1000 | MOSFET 2N-CH 1200V 100A S... |
QJD1210011 | Powerex Inc. | 0.0 $ | 1000 | MOSFET 2N-CH 1200V 100A S... |
QJD1210SA1 | Powerex Inc. | 0.0 $ | 1000 | MOSFET 2N-CH 1200V 100A S... |
QJD1210SA2 | Powerex Inc. | 0.0 $ | 1000 | MOSFET 2N-CH 1200V 100A S... |
QJD1210SB1 | Powerex Inc. | 0.0 $ | 1000 | MOD MOSFET 1200V 10A DUAL... |
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