QJD1210011 Allicdata Electronics
Allicdata Part #:

QJD1210011-ND

Manufacturer Part#:

QJD1210011

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: MOSFET 2N-CH 1200V 100A SIC
More Detail: Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A...
DataSheet: QJD1210011 datasheetQJD1210011 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
Power - Max: 900W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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QJD1210011 Application Field and Working Principle

The QJD1210011 is a high-density low power consumption CMOS silicon gate array, which is widely used in many fields such as consumer electronics, automotive and telecommunications. It is designed for integrated circuit (IC) and other process-sensitive applications.

The QJD1210011 provides high performance, low power consumption and short lead times. This is achieved by a combination of state-of-the-art manufacturing processes and a unique architecture, which includes field-effect transistors (FETs) and metal-oxide-semiconductor (MOSFET) arrays. The QJD1210011 also utilizes an array of interlocking MOSFETs to reduce leakage and improve device performance.

The gate array of the QJD1210011 consists of an array of transistors, which are grouped into layers, each layer forming a “grid” of connections. The FETs, which form the cores of each layer, are connected by a switching matrix. This matrix allows transistors to be switched from one layer to another in order to form a wide array of circuit topologies.

The FETs of the QJD1210011 are capable of very rapid switching from off to on, and from on to off, which enables them to change their switching states very quickly in response to a signal. This is an important feature for applications such as memory devices and microprocessors, where high speed switching is essential.

In addition, the MOSFETs in the QJD1210011 provide excellent performance and low power consumption when compared to conventional FETs. The MOSFETs have a lower gate capacitance and a shorter time constant compared to conventional FETs.

The QJD1210011 also utilizes an embeddable logic array, which enables the device to process and store data. This data can be then passed to the desired output, depending on the programmed logic. The array also allows for efficient use of the device’s power, since it can be turned on or off depending on the input that it is receiving.

Overall, the QJD1210011 provides an excellent platform for a wide range of applications. Its combination of advanced features, low power consumption, and relatively low cost makes it an attractive choice for designers looking for a highly integrated solution for embedded systems.

The specific data is subject to PDF, and the above content is for reference

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