QS6K21TR Discrete Semiconductor Products |
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Allicdata Part #: | QS6K21TRTR-ND |
Manufacturer Part#: |
QS6K21TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 45V 1A TSMT6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 45V 1A 1.25W Surfa... |
DataSheet: | QS6K21TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Base Part Number: | *K21 |
Supplier Device Package: | TSMT6 (SC-95) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.25W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Series: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Current - Continuous Drain (Id) @ 25°C: | 1A |
Drain to Source Voltage (Vdss): | 45V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The QS6K21TR is a surface-mountable transistor array designed for analog and digital circuit applications. It consists of two independent N-channel MOSFETs, each with its own P-channel MOS-gate input. This transistor array is a versatile device that is capable of providing efficient operation for a variety of analog and digital applications. It has an adjustable channel width, making it useful for many different types of circuits.
The QS6K21TR transistor array can be categorised among the Transistor-FETs, MOSFETs-Arrays due to its two independent transistor configuration. The two transistors can be operated separately for the sake of analog and digital circuit specific requirements. The device is designed with an adjustable channel width so as to allow configurations ranging from small signal applications to full power applications. Other key features of this device include high speed switching, low power dissipation, good voltage control, improved noise immunity and good signal fidelity.
The working principle of the QS6K21TR is such that it takes two independent N-channel MOSFETs, each with its own P-channel MOS-gate input. These transistors are then connected in series with each other to optimize their performance. This arrangement of transistors with its corresponding integrated circuits allows for efficient operation and excellent signal fidelity. The P-channel MOS-gate input ensures that the gate voltage for each transistor is independently adjustable, which is useful for certain types of applications. For example, in analog circuits, the p-channel MOS-gate can be used to control the current flow through the transistor.
The power characteristics of the QS6K21TR are also quite versatile, with an adjustable drain-source voltage range from 4V to Vin-1 and an adjustable drain-gate voltage range from 3V to Vin+1. The power dissipation of the device is quite low and it is designed to provide efficient operation at both low and high voltage levels. The device also provides good frequency response. In terms of noise immunity, the QS6K21TR has excellent noise reduction characteristics, making it ideal for applications that require low-noise operation.
The QS6K21TR is highly versatile and can be used in a variety of applications depending on its particular features. It is ideal for use in analog and digital circuits due to its excellent signal fidelity and low power dissipation. Its adjustable channel width makes it suitable for a wide range of analog and digital circuit configurations. It is also useful for applications that require high-speed switching, noise immunity and improved signal fidelity. The QS6K21TR is a valuable addition to Transistor-FETs, MOSFETs-Arrays and can prove to be a great asset for many different types of circuit applications.
The specific data is subject to PDF, and the above content is for reference
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