| Allicdata Part #: | QS6M4TR-ND |
| Manufacturer Part#: |
QS6M4TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N/P-CH 30V/20V 1.5A TSMT6 |
| More Detail: | Mosfet Array N and P-Channel 30V, 20V 1.5A 1.25W S... |
| DataSheet: |  QS6M4TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
| Base Part Number: | *M4 |
| Supplier Device Package: | TSMT6 (SC-95) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power - Max: | 1.25W |
| Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.6nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 230 mOhm @ 1.5A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.5A |
| Drain to Source Voltage (Vdss): | 30V, 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | N and P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The QS6M4TR is a state of the art family of high powered MOSFET arrays. This device is designed to improve energy efficiency and compactness, while providing superior performance. It can operate in wide temperature range, low power consumption and fast response time.
A MOSFET array consists of a number of series connected MOSFET transistors. Each transistor consists of an insulated gate along with a source and drain. All the individual transistors in the array are connected in reverse-parallel order, forming a bridge circuit. Thus, the load current is supplied from the gates of the individual transistors.
The QS6M4TR family of MOSFET arrays has wide application fields such as automotive, medical, industrial, consumer, and electronic products. It is widely used for high power switching and related applications. This device is capable of withstanding high current, low voltage and high frequency which makes it suitable for applications in high frequency power management and switching.
The working principle of QS6M4TR starts with a closed loop of current. When a voltage is applied across the gates of the transistors energy is released and passes through the gates. This energy is then synchronized and drives the output. The output of this MOSFET array can be tailored according to the application. In addition, a current limiter protection feature can be enabled if required.
The QS6M4TR MOSFET arrays are designed with a wide range of features such as low voltage tolerance, low power, low gate charge and improved thermal resistance. These features make it highly reliable and efficient for all kinds of power switching applications. They are also designed with on-chip small signal ESD protection and over-current limiting for improved safety.
Thus, QS6M4TR MOSFET arrays are an ideal choice for applications that need superior performance and compactness at an affordable cost. It offers superior performance, flexibility and reliability at an affordable price. It can be used in a wide variety of applications such as motor control, power management, motor control, industrial automation, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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