QSE113E3R0 Sensors, Transducers

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Optical Sensors - Phototransistors are devices that contain both a photosensitive element and an amplifier. They are commonly used in applications that require detecting and measuring small changes in light intensity. The QSE113E3R0 Phototransistor is a standard diffuse reflective NPN type. It is built with a silicon phototransistor detector and an amplifier stage that works in two modes: current and voltage.

The basic design of the QSE113E3R0 includes an integrated shield which ensures that any detected light is correctly detected and amplified. This makes it ideal for applications that require sensitive detection of light in less than ideal conditions. The shield also helps protect against external interference and damage. Additionally, the QSE113E3R0 includes a thermal shutoff which prevents the device from malfunctioning or overloading when exposed to high temperatures.

In terms of its application field, the QSE113E3R0 is especially suited for use in the detection and monitoring of ambient light levels for medical and industrial uses. It can provide accurate data for a range of lighting conditions, from daylight to nighttime. It is also commonly used in security applications where it is useful for detecting small changes in the amount of light in an area. Additionally, the QSE113E3R0 can also be used to control the amount of light in an area using a control circuit to adjust the device\'s sensitivity.

The working principle of the QSE113E3R0 Phototransistor is based on two main components: the detector and the amplifier. The detector is a photosensitive element that absorbs light and converts it to an electrical current. This current is then sent to the amplifier, which further amplifies the signal and outputs it as a voltage or current. The output is then used as the basis for further processing in the application.

The QSE113E3R0 is designed using a standard NPN construction. This allows for greater stability and accuracy due to its ability to remain sensitive in a variety of conditions. The integrated shield also helps to ensure that any detected light is reliably detected and amplified. This is especially helpful when used in highly sensitive applications. Additionally, the device also features a thermal shutoff, which prevents it from malfunctioning or overloading when exposed to high temperatures.

In conclusion, the QSE113E3R0 Phototransistor is an ideal choice for applications requiring the detection and measurement of small changes in light intensity. Its standard NPN construction provides greater stability and accuracy, while its integrated shield provides reliable detection of light in less than ideal conditions. Furthermore, the thermal shutoff helps to ensure the device does not malfunction or overload when exposed to high temperatures. Overall, the QSE113E3R0 is a reliable choice for a wide range of medical and industrial applications.

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