Allicdata Part #: | QSE114E3R0-ND |
Manufacturer Part#: |
QSE114E3R0 |
Price: | $ 0.00 |
Product Category: | Sensors, Transducers |
Manufacturer: | ON Semiconductor |
Short Description: | PHOTOTRANSISTOR IR 30V SIDELOOKR |
More Detail: | Phototransistor 880nm Side View Radial, Side View |
DataSheet: | QSE114E3R0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 880nm |
Viewing Angle: | 50° |
Power - Max: | 100mW |
Mounting Type: | Through Hole |
Orientation: | Side View |
Operating Temperature: | -40°C ~ 100°C (TA) |
Package / Case: | Radial, Side View |
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Optical Sensors - Phototransistors
A phototransistor is an optoelectronic device that combines some of the properties of ordinary transistors and light-sensitive diodes. It is a semiconductor device designed to amplify or switch light signals. Phototransistors are made from a variety of materials, including silicon, gallium arsenide, and germanium. Phototransistors are commonly used to detect infrared (IR), ultraviolet (UV), or visible light, and convert the light energy into electrical signals, which can then be processed and used to create or control devices.
QSE114E3R0 Application field
The QSE114E3R0 is a high performance and low power consumption phototransistor device. It is designed for use in light detection and control applications. The phototransistor is suitable for light detection/control in the industrial, medical, automotive, security, and consumer electronics markets. The device is commonly used for devices such as IR proximity sensors, time-of-flight sensors, presence detectors, active motion detectors, light-touch switches, gas sensors, smoke detectors, and environmental sensors.
QSE114E3R0 Working Principle
The QSE114E3R0 phototransistor is a transistor whose base-emitter junction is exposed to light. The light excites electrons in the junction, producing an electrical current. When exposed to visible light, it acts as an amplifier, increasing the current flow from the base to the collector. When exposed to infrared light, it acts as a switch, turning off the current flow from the base to the collector.
The device has a built-in optical filter, which enables it to operate only in pre-defined wavelengths, depending on the application. In addition, the device features a wide operating voltage range and high output current capability, making it suitable for a wide range of applications. The device is also incredibly fast, with response times in the nanosecond range.
Conclusion
In conclusion, the QSE114E3R0 is an advanced and reliable phototransistor designed for light detection and control applications. It is capable of efficiently amplifying or switching light signals, which can then be processed and used to create or control devices. The device has a built-in optical filter and a wide operating voltage range and high output current capability, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
QSE113E3R0 | ON Semicondu... | 0.15 $ | 4000 | PHOTOTRANSISTOR IR 30V SI... |
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QSE114E3R0 | ON Semicondu... | 0.0 $ | 1000 | PHOTOTRANSISTOR IR 30V SI... |
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