R2000-TP Discrete Semiconductor Products |
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Allicdata Part #: | R2000-TPMSTR-ND |
Manufacturer Part#: |
R2000-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 2KV 500MA DO41 |
More Detail: | Diode Standard 2000V 500mA Through Hole DO-41 |
DataSheet: | R2000-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 2000V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 500mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 2000V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | R2000 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R2000-TP diode is a single, rectifier diode designed for circuit protection and high-reliability applications. It has a maximum current rating of 20A and a voltage drop of around 0.8V. The device is capable of operating in temperatures of up to +175°C and has a maximum operating temperature range of -40 to +175°C.
The typical application field of the R2000-TP diode includes automotive and medical electronics, aerospace, power supplies, and other harsh environments. It is manufactured with a special base-metal-alloy that allows for greater heat dissipation and longer life, making it suitable for applications in areas where reliability and performance are essential. The device is also well-suited to industrial and military applications where its robust design ensures reliable performance in even the harshest environments.
The working principle of the R2000-TP diode is based on its construction. The diode consists of a piece of semiconductor material, typically silicon, sandwiched between two electrodes that are insulated by a layer of ceramic. When voltage is applied to the diode, the electrons present in the semiconductor material travel towards the positive electrode. As the electrons travel, a reverse current is generated which is made up of majority carriers, or holes, that travel towards the negative electrode.
When the holes reach the negative terminal, they are recombined with electrons, creating electric current which is directed through the device. This type of current is known as a rectified current, which is what the R2000-TP diode is designed to produce. The diode is also designed to protect circuits by blocking the flow of electricity in the reverse direction, meaning that it only allows current to flow in one direction. This feature helps to prevent electric shorts and alleviates the risk of accidental damage to the circuit.
As a single, rectifier diode, the R2000-TP is designed to offer a high level of circuit protection and reliability in a range of applications. Its robust construction and high current rating allow it to provide reliable performance in even the most challenging applications, making it an ideal choice for those looking for reliable and reliable performance in harsh environments. As the device is designed for a wide range of applications, its high performance and reliable operation make it an excellent choice for those looking for high-reliability diodes in their circuit protection applications.
The specific data is subject to PDF, and the above content is for reference
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