RA203020XX Allicdata Electronics
Allicdata Part #:

RA203020XX-ND

Manufacturer Part#:

RA203020XX

Price: $ 228.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: DIODE GP 3KV 2000A POWRDISC
More Detail: Diode Standard 3000V 2000A Chassis Mount Pow-R-Dis...
DataSheet: RA203020XX datasheetRA203020XX Datasheet/PDF
Quantity: 1000
30 +: $ 205.74500
Stock 1000Can Ship Immediately
$ 228.61
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3000V
Current - Average Rectified (Io): 2000A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 200mA @ 3000V
Capacitance @ Vr, F: --
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: Pow-R-Disc
Description

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A RA203020XX diode, commonly referred to as a single rectifier diode, is a small semiconductor manufactured using a Schottky barrier structure. The Schottky barrier is a thin layer of metal and dielectric material that limit the flow of electrons through the diode. This makes the diode ideal for applications where a high voltage rectifier or blocking diode is necessary. It is used in many different applications ranging from power supplies to automotive and communications systems.

The RA203020XX diode is capable of blocking voltages up to 30 volts and can handle currents up to 20 amperes. Both of these characteristics make it a good choice for use in power supplies and automotive applications. The diode can also act as a rectifier, allowing for the conversion of AC power to DC. This can be used for various purposes, including charging batteries or powering up appliances.

The diode’s construction consists of a lightly doped N-type semiconductor region and heavily doped P-type semiconductor region, connected by a thin Schottky barrier. When reverse biased, the Schottky barrier inhibits current flow, making the diode a good choice for blocking voltages up to 30 volts. For forward biased operation, the current is limited by the P-N junction’s depletion layer. This forward bias mode allows for the conversion of AC currents to DC.

In addition to the blocking and rectifying capabilities of the RA203020XX diode, they also offer several other benefits. They can handle high currents, have low leakage current, low capacitance, and are low noise. This makes the diode ideal for power conversion applications, as well as signal processing applications.

The RA203020XX diode has a range of applications in various power-related and signal processing applications. Due to its ability to block high voltage and handle high currents, it is ideal for use in power supplies and automotive applications. It can also be used as a rectifier, allowing for the conversion of AC power to DC. In addition, it has low noise, making it suitable for use in signal processing applications. Its low capacitance and low leakage currents also make it suitable for use in other applications.

In summary, the RA203020XX diode is an ideal choice for applications requiring a high voltage rectifier or blocking diode. It is a small semiconductor manufactured using a Schottky barrier structure, which limits the flow of electrons through the diode when in reverse biased mode. It is capable of blocking voltages up to 30 volts and handling currents up to 20 amperes. The diode can also act as a rectifier, allowing for the conversion of AC power to DC. The diode has a range of applications in various power-related and signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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