RB050LAM-30TFTR Allicdata Electronics

RB050LAM-30TFTR Discrete Semiconductor Products

Allicdata Part #:

RB050LAM-30TFTR-ND

Manufacturer Part#:

RB050LAM-30TFTR

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
More Detail: Diode Schottky 30V 3A Surface Mount PMDTM
DataSheet: RB050LAM-30TFTR datasheetRB050LAM-30TFTR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.17082
Stock 3000Can Ship Immediately
$ 0.19
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Description

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Diodes can be classified into various types depending on their structure and application. RB050LAM-30TFTR belongs to the type of single rectifiers, which are mainly used for power rectification, waveform conversion, and protection against current surge.

RB050LAM-30TFTR is a single-phase, half wave rectifier diode featuring a low forward voltage drop value of 0.45V, fast switching speed and low reverse leakage current, making it an ideal choice for a wide range of applications.

In detail, the structure of RB050LAM-30TFTR consists of a n-type layer and a p-type layer, forming a PN junction diode. The n-type layer is heavily doped but the p-type layer is lightly doped. Thus, most of the current carriers in the n-type layer are electrons, while most of those in the p-type layer are holes. The junction between the two layers creates an energy barrier known as the depletion layer which acts as a one way valve or gate for current to flow through in one direction only.

When the RB050LAM-30TFTR is subjected to a forward voltage, electrons from the n-type layer move to the p-type layer, and holes from the p-type layer move to the n-type layer, thus forming n-type and p-type regions. These n-type and p-type regions act like an electrode. The forward-biased PN junction builds up a high electric field between the n-type and p-type regions, thus allowing current to flow through the device.

Since the RB050LAM-30TFTR rectifies the AC input, it blocks the current flow when the voltage is in the negative polarity making it suitable for power supplies, DC motor control circuits, voltage regulator and converter applications. As it also limits current surge load, it can also be used to protect power circuity from sudden overload.

Applications of RB050LAM-30TFTR include uses in single-phase and multi-phase rectifiers such as in rectifying circuits of AC to DC conversion, rectification and protection of raw power from AC to DC, in flyback and forward rectifiers, and in overvoltage protection circuits. They are also used as vibrator rectifiers in consumer electronics for controlling motors’ voltage. Additionally, the RB050LAM-30TFTR is used in switched-mode power supplies and high-frequency inverters to reduce voltage and current ripples, and in switching pre-drivers to reduce switching time.

In conclusion, the RB050LAM-30TFTR with its low forward voltage drop, fast switching speed, and low reverse leakage current is ideal for power rectification, waveform conversion, and protection against current surge in a range of applications.

The specific data is subject to PDF, and the above content is for reference

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