RB058LAM-60TR Discrete Semiconductor Products

RB058LAM-60TR is a diode rectifier that is classified as a single rectifier. It is part of the RBxxxLAM series of fast recovery rectifiers.

The RB058LAM-60TR is a fast recovery rectifier used in high speed power conversion applications. It is rated for operation up to 100 kHz and is used for rectification of high frequency DC signals in a variety of power electronics applications. The device has a soft recovery characteristic, allowing for optical isolation and high efficiency in power conversion circuits.

The RB058LAM-60TR utilizes an avalanche breakdown voltage rating of 70 V, which allows it to operate reliably across a wide range of voltage sources. It has an insulated gate bipolar transistor (IGBT) die with a current rating of 60 Amp. It is also capable of high-speed operation, allowing for power conversion in time-critical applications.

The RB058LAM-60TR is well suited for high speed applications in a wide range of fields, including but not limited to automotive, industrial, telecommunications, and medical technology. It can also be used in solar panel and battery charger converters, where its soft recovery characteristic provides high efficiency, as well as reliable and stable operation. The high speed and current ratings make the RB058LAM-60TR the ideal choice for these types of high-frequency power switching circuits.

The working principle of the RB058LAM-60TR is based on the Schottky diodes principle. When a forward bias voltage is applied to the diode, holes and electrons enter the depletion region and recombine. This generates an electric field that prevents further current flow in the forward direction. But when the applied voltage is reversed, the electric field is removed and current can flow in the reverse direction. This reverse-biased current flow is known as the rectification process, which is the basic principle of operation for this type of diode.

In the RB058LAM-60TR, a soft recovery characteristic is obtained by using an insulated gate bipolar transistor (IGBT), which is a technology based on the combination of insulated gate field-effect transistors (IGFETs) and bipolar junction transistors (BJTs). This combination allows for a soft recovery, allowing for optical isolation and high efficiency in power conversion circuits.

In conclusion, the RB058LAM-60TR is a fast recovery diode rectifier used in a wide range of applications. Its avalanche voltage and current ratings make it suitable for high-frequency switching circuits and its soft recovery characteristic allow for high efficiency in power conversion. This makes it the ideal choice for applications such as solar panel and battery charger converters.