RB055L-60TE25 Allicdata Electronics

RB055L-60TE25 Discrete Semiconductor Products

Allicdata Part #:

RB055L-60TE25TR-ND

Manufacturer Part#:

RB055L-60TE25

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE SCHOTTKY 60V 3A PMDS
More Detail: Diode Schottky 60V 3A Surface Mount PMDS
DataSheet: RB055L-60TE25 datasheetRB055L-60TE25 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 70µA @ 60V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Description

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Introduction

RB055L-60TE25 is a single rectifier diode, specially designed for the application in the electronics industry. It is a three-terminal device, with a controllable anode and cathode, and a gate terminal. This device is designed for use in power supplies, radio frequency communication, video display drive and other fields where low power dissipation and low voltage drop are important factors.

Application Field

RB055L-60TE25 is suitable for use in low power supplies, including regulated power supplies, regulated dc-dc converters and shunt voltage regulators. It can also provide an isolated impedance between the anode and cathode at amplifier outputs, or as an isolator to connect application-specific ICs or other logic ports. It is also used as switching diodes at low frequency.

Working Principle

The working principle of RB055L-60TE25 is based on the PN junction diode effect. The diode consists of two layers, one layer of n-type semiconductor and another layer of p-type semiconductor, forming a diode PN junction. When the anode terminal is connected to the positive source, the positive charge carriers in the n-type region create a depletion zone at the junction and the diode will become forward biased, allowing current to flow from the anode to the cathode terminal. When the anode terminal is connected to the negative source, the negative charge carriers in the p-type region create a depletion zone at the junction and this will switch the diode to its reverse bias state, blocking the flow of current in the anode to the cathode. The diode is then switched off.The gate terminal of RB055L-60TE25 acts as a control terminal and is used to modulate the current flow through this diode. By adjusting the gate voltage, the current flow through the diode can be adjusted, allowing it to be used in different applications. The gate terminal is used for controlling the signal path for the diode, for example, controlling the signal frequency for the signal can be controlled by the gate voltage. The RB055L-60TE25 also has low forward voltage drop, making it energy efficient and it also has high breakdown voltage and high reverse leakage current, making it suitable for use in higher voltage applications.

Conclusion

RB055L-60TE25 is a single rectifier diode, specially designed for use in various applications, such as power supplies, radio frequency communication, video display drive and other low power applications. It provides low voltage drop and low power dissipation, making it energy efficient. It has a controllable anode and cathode and a gate terminal, allowing it to be used in different applications. It also has low forward voltage drop, high breakdown voltage and high reverse leakage current, making it suitable for use in higher voltage applications.

The specific data is subject to PDF, and the above content is for reference

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