Allicdata Part #: | RB081LAM-20TRTR-ND |
Manufacturer Part#: |
RB081LAM-20TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE SCHOTTKY 20V 5A PMDTM |
More Detail: | Diode Schottky 20V 5A Surface Mount PMDTM |
DataSheet: | RB081LAM-20TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 450mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 700µA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | PMDTM |
Operating Temperature - Junction: | 125°C (Max) |
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The RB081LAM-20TR is a power MOSFET, also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a type of transistor that can be used in many different applications, and it is known for its superior efficiency and performance. The RB081LAM-20TR is a single, power MOSFET that is used mainly in the field of power conversion, power amplifiers and high-speed switching circuits.
The power MOSFET is an electronic device that has an advantageous combination of low power consumption, great insulation properties, small size, and relatively low cost. They are constructed from two or more transistors in combination with other components. Due to their advantageous properties, power MOSFETs are widely used in a number of different power conversion applications.
The working principle of the RB081LAM-20TR is based on the fact that it is an insulated gate device. This means that the gate voltage can be controlled in order to control the current flow. When the gate voltage is increased, the current flow increases and hence, the power output increases. On the other hand, when the gate voltage is decreased, the current flow decreases and thus, the power output decreases.
The RB081LAM-20TR is typically used in applications such as power amplifiers, switched-mode power supplies, high-speed switching circuits, and motor and motor control applications. In these circuits, it is used to control the current flow with high precision. This helps in optimizing the efficiency and performance of the overall system.
The RB081LAM-20TR is considered to be a very reliable power MOSFET due to its low on-resistance and high breakdown voltage. This allows it to be used in a variety of applications, such as power amplifiers, switching circuits, and motor control circuits. The robust construction and superior performance of the RB081LAM-20TR make it a popular choice for power conversion and high-speed switching applications.
In conclusion, the RB081LAM-20TR is a single, power MOSFET which is used mainly in the field of power conversion, power amplifiers, and high-speed switching circuits. Its working principle is based on the fact that it is an insulated gate device, which allows the gate voltage to be controlled in order to control the current flow. Due to its advantageous combination of low power consumption, great insulation properties, small size, and relatively low cost, the RB081LAM-20TR is a highly reliable choice for use in many power conversion and high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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