RB088BGE150TL Discrete Semiconductor Products |
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Allicdata Part #: | RB088BGE150TLTR-ND |
Manufacturer Part#: |
RB088BGE150TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 150V TO252 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 150V 10... |
DataSheet: | RB088BGE150TL Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 880mV @ 5A |
Speed: | -- |
Current - Reverse Leakage @ Vr: | 15µA @ 150V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252GE |
Description
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Introduction
The RB088BGE150TL is a rectifier array belonging to the high-performance diode family. It is consists of two ultra-fast silicon PIN junction diodes, each with a current capacity of up to 150 mA and a maximum forward current of 3.2 A. The device operates in an ultra-low voltage drop of 0.30V, providing high efficiency and long-term reliability.Applications
The RB088BGE150TL is ideal for use in applications requiring precise digital signal level control. It is suitable for a wide range of uses, including power management switching, solar cell protection, data transmission, and load balancing. In addition, it can be used in high-voltage motor control applications and other high-speed switching operations.Working Principle
A typical RB088BGE150TL array is constructed from two ultrasilicon PIN junction diodes with a maximum operating voltage of 20 V. Each diode can handle up to 150 mA and a maximum forward current of 3.2 A. When the anode of the diode is placed in a negative potential, electrons flow from the diode cathode to the diode anode, creating a voltage drop across the diode. This current flow through the diode is known as the forward current.When the anode is driven above its reverse bias voltage, the diode starts to conduct and the current flow reverses. This is known as the reverse current and is usually limited by the forward current to maintain the stability of the array. The RB088BGE150TL can tolerate a reverse current up to 1.2 A when used in a 20V environment, ensuring that the reverse current will not exceed the maximum characteristics of the diode.Conclusion
The RB088BGE150TL is a versatile rectifier array that can be used in a wide range of applications, from power management to data transmission. Its high-performance silicon PIN diodes have a maximum current capacity of 150 mA and a maximum forward current of 3.2 A, while its low voltage drop of 0.30V ensures high efficiency and long-term reliability. Its reverse current tolerance of up to 1.2 A is ideal for applications that require precise levels of control.The specific data is subject to PDF, and the above content is for reference
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