RBR1L30ATE25 Allicdata Electronics

RBR1L30ATE25 Discrete Semiconductor Products

Allicdata Part #:

RBR1L30ATE25TR-ND

Manufacturer Part#:

RBR1L30ATE25

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE SCHOTTKY 30V 1A PMDS
More Detail: Diode Schottky 30V 1A Surface Mount PMDS
DataSheet: RBR1L30ATE25 datasheetRBR1L30ATE25 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.12981
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Description

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Diodes are popular components that are used in analog and digital circuits and are very useful for applications such as rectification and voltage regulation. A single diode, also known as RBR1L30ATE25, is a semiconductor device that is constituted by a negatively charged layer, or “N” layer, and a positively charged layer, or “P” layer. The anode and cathode terminals of the diode allow the current flow through the diode, it is the movement of these electrons that allow the current to pass either through the diode or to be blocked.

RBR1L30ATE25 is an ultra-fast dimension diode with a high forward current rating. This power diode is widely used in applications such as power supplies, switching, voltage stabilization, current rectification, overload protection and circuits, and overvoltage protection for power supplies.

The working principle of the RBR1L30ATE25 is straightforward: it blocks current from flowing from the P-layer to the N-layer and allows it to flow from N-layer to P-layer. This is known as rectification and is the basic operation of diodes. The diode works only when the anode is more positive than the cathode and in this case, current can freely flow, while when the cathode is more positive, the diode is blocking the current.

The diode offers a forward voltage drop of about 0.6V and a reverse voltage of up to 30V. Its avalanche speed is very low, making it ideal for applications such as high-efficiency buck and boost converters. The RBR1L30ATE25 can be used in a variety of switching applications as well as voltage regulation, making it a popular choice for many digital and analog circuits.

The RBR1L30ATE25 diode is also designed to withstand overcurrent and overvoltage conditions, making it a very reliable component. The diode is also highly resistant to transient voltages, making it suitable for use in a wide range of protection circuits and electronic stabilizers.

In summary, the RBR1L30ATE25 single diode is a versatile and cost-effective semiconductor device with a wide range of applications. It can be used in voltage regulation, current rectification, overload protection and overvoltage protection circuits, making it a great choice for many analog and digital circuits. The diode is also highly reliable and resistant to overcurrent and overvoltage conditions, making it a popular choice for many applications such as power supplies, switching, voltage stabilization and current rectification.

The specific data is subject to PDF, and the above content is for reference

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