RBR1MM30ATR Discrete Semiconductor Products |
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Allicdata Part #: | RBR1MM30ATR-ND |
Manufacturer Part#: |
RBR1MM30ATR |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 1A PMDU |
More Detail: | Diode Schottky 30V 1A Surface Mount PMDU |
DataSheet: | RBR1MM30ATR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07983 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 480mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | PMDU |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes are semiconductor devices that allow current to flow in one direction but block current from flowing in the reverse direction. Rectifier diodes, such as the RBR1MM30ATR, are devices used to convert AC power to DC power. They are commonly used for a variety of applications, such as in AC-DC power supplies, energy storage systems, battery chargers, and DC-DC converters. The RBR1MM30ATR rectifier diode is a powerful single diode optimized for switchmode power supply (SMPS) applications.
The RBR1MM30ATR is a Schottky barrier rectifier diode with an integrated guard ring structure. It features a low forward voltage drop, low reverse leakage current, and fast recovery time. The RBR1MM30ATR is designed to reduce power losses in both the forward and reverse direction, making it ideal for high-efficiency applications. Its forward current rating is 1A and its reverse voltage rating is 30V. It has an operating temperature range of -55°C to +125°C, enabling it to be used in a wide variety of environments.
The RBR1MM30ATR uses Schottky Barrier technology to reduce the size of the diode and eliminate the need for an external guard ring. Its integrated guard ring structure offers a higher breakdown voltage and thermal performance, providing an ideal solution for applications requiring low power loss. The device also features a low reverse leakage current and fast recovery time, which helps reduce power dissipation in the forward and reverse directions.
In the forward conduction direction, the RBR1MM30ATR operates like a traditional diode, allowing current to flow in one direction and blocking current from flowing in the reverse direction. This one-way conductance is used to convert AC power to DC power. The diode conducts electricity when the voltage across is greater than a certain threshold voltage, and blocks current when the voltage across is less than that threshold voltage. The voltage threshold known as the forward voltage drop.
In the reverse conduction direction, the current is blocked from flowing through the diode. However, some amount of current still flows in the reverse direction, due to a phenomenon known as “reverse leakage current”. The RBR1MM30ATR’s low reverse leakage current helps reduce power losses due to reverse conduction.
The RBR1MM30ATR is designed to be used in power supplies, energy storage systems, battery chargers, and DC-DC converters. It is an ideal solution for applications where low forward voltage drop, low reverse leakage current, and fast recovery time are required, such as switchmode power supply (SMPS) applications. The device’s integrated guard ring structure also enhances its breakdown voltage and thermal performance, making it suitable for use in a wide range of environments.
The specific data is subject to PDF, and the above content is for reference
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