RCLAMP3522T.TFT Circuit Protection

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In the field of TVS - Diodes, RCLAMP3522T.TFT has become a defining product, due to its reliable design and its varied application possibilities. It is an important component for power systems in industrial, automotive, telecommunications, medical, broadcasting and consumer electronics.

RCLAMP3522T.TFT is an enhanced two-level, bidirectional transient voltage suppressor (TVS). It integrates low capacitance and low leakage current in the same package as a two-level diode array, making it ideal for protecting sensitive electronics from electrostatic discharge (ESD), electrical fast transients (EFTs), and lightning-induced surges.

RCLAMP3522T.TFT can be used for both over and under voltage protection, over current protection, and pre-emptive surge protection. In addition, it has been optimized for applications that require very low clamping voltages, making it ideal for low-voltage systems. Its low insertion loss and small size are a key benefit for modern power systems, making it a versatile component in the field of TVS - Diodes.

The working principle of RCLAMP3522T.TFT is simple yet effective. Its silicon diode array consists of four bidirectional silicon dopant structures that suppress peak transient voltages up to 35V in two clamping levels. When a transient voltage exceeds the breakdown voltage (BV) of the first level diode, a low impedance path is formed across the two horizontal lines of the array and the current is directed to the first level of clamping. If the transient voltage further increases, the second level diode will also conduct and the voltage on the two lines will be clamped to 3.5V.

This two-level protection enables the RCLAMP3522T.TFT to protect against electrical transients up to 35V and prevents the formation of secondary breakdown arcs that could cause electrical arcing and damage to electronic components. It is also capable of limiting inrush currents up to 10A.

The design of RCLAMP3522T.TFT further enhances its versatility. It features a low-impedance stainless steel shield, which minimizes radio frequency interference (RFI) and electromagnetic interference (EMI). The low-contact inductance of the integrated metal-oxide-semiconductor field-effect transistor (MOSFET) also reduces the time required for current to flow through the device, thus providing improved response time. The compact package size also provides increased manufacturing flexibility.

In conclusion, RCLAMP3522T.TFT is an excellent choice for TVS - Diodes applications in power systems, telecommunications, medical, broadcasting and consumer electronics. Its two-level protection, low insertion loss, low capacitance and low leakage current make it an ideal solution for surge and transient protection. It also provides increased design flexibility due to its low-impedance stainless steel shield, low-contact inductance and small package size.

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