RF6886TR7 RF/IF and RFID |
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Allicdata Part #: | 689-1091-2-ND |
Manufacturer Part#: |
RF6886TR7 |
Price: | $ 2.47 |
Product Category: | RF/IF and RFID |
Manufacturer: | RFMD |
Short Description: | IC PWR AMP 3.6V 24-QFN |
More Detail: | RF Amplifier IC CDMA, GSM, EDGE 100MHz ~ 1GHz 24-L... |
DataSheet: | RF6886TR7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 2.24406 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Frequency: | 100MHz ~ 1GHz |
P1dB: | 33.5dBm |
Gain: | 31dB |
Noise Figure: | -- |
RF Type: | CDMA, GSM, EDGE |
Voltage - Supply: | 3.6V |
Current - Supply: | 390mA |
Test Frequency: | 900MHz |
Package / Case: | 24-VFQFN Exposed Pad |
Supplier Device Package: | 24-LCC (4x4) |
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RF6886TR7 Amplifiers
RF6886TR7 amplifiers are widely used in radios and other applications involving signal amplification and transmission. They are a type of power amplifier, specifically an integrated circuit (IC) power amplifier, and are extremely versatile, providing high performance in terms of power, efficiency, and linearity.
The RF6886TR7 amplifier is primarily used in wireless and 5G applications, such as base station and mobile communication systems. It offers an integrated high-power Radio Frequency (RF) power amplifier with a high linear-gain capability, low distortion, and a wide dynamic range, enabling it to meet the requirements for complex, high-data rate, and high-bandwidth applications.
The RF6886TR7 amplifier is based on a GaN (Gallium Nitride), HEMT (High Electron Mobility Transistor) process with a maximum output power of 65 dBm (1W) over the frequency range of 6 to 18 GHz. The amplifier is high power and linear, with up to 20dB gain, 40% power added efficiency, and a flat noise figure across the operating range. Additionally, this amplifier offers excellent thermal performance, outstanding isolation, and exceptionally low parasitic capacitance.
Working Principle
The RF6886TR7 amplifier works on a principle known as direct-current to radio-frequency conversion. This means that it amplifies the direct current by converting to the radio frequency level. The first stage of the amplifier converts the direct current signals coming from the antenna into a radio frequency. This is then amplified in the power amplifier stage.
The RF6886TR7 has two amplifier stages, the input and power amplifiers. The input stage provides up to 20 dB gain with its adjustable gain control. The power amplifier then provides additional gain up to 65 dBm (1W) and efficiency up to 40%.
The RF6886TR7 amplifier offers excellent linearity and low distortion across the entire operating range. It employs several different technologies including GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) in the input stage, and a combination of nonlinear based distortion techniques and linear-based techniques in the power amplifier stage. These techniques help ensure superior linearity and low distortion.
The RF6886TR7 amplifier also offers exceptional thermal performance and isolation for enhanced power transfer across the RF bands. The amplifier is built to withstand harsh conditions and withstand vibration, allowing it to be used in harsh environments. Additionally, the amplifier provides up to 2.4GHz operation, meaning it can be used over a wide range of applications for wireless and 5G communication.
In summary, the RF6886TR7 amplifier is a compact, high power, and linear integrated circuit power amplifier. It offers an adjustable high gain, excellent thermal performance, reliable power delivery, and low distortion across the frequencies. This amplifier is well suited for various applications including 5G wireless communication, base station, and other high frequency and high data rate systems requiring high performance.
The specific data is subject to PDF, and the above content is for reference
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