| Allicdata Part #: | RGF1MHE3_A/I-ND |
| Manufacturer Part#: |
RGF1MHE3_A/I |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE 1000V SMD |
| More Detail: | Diode |
| DataSheet: | RGF1MHE3_A/I Datasheet/PDF |
| Quantity: | 1000 |
| 6500 +: | $ 0.10551 |
| Series: | -- |
| Part Status: | Active |
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Diodes - Rectifiers - Single
RGF1MHE3_A/I is a high power Schottky Barrier Diode with Forward Voltage of 1.85V at a current of 3A. It has a Maximum Reverse Leakage current of 300uA at a reverse voltage of 10V. The maximum operating temperature for the diode is 150°C. It is highly suitable for low voltage operations and has excellent heat dissipation capability.
RGF1MHE3_A/I is mainly used in applications like SMPS, Switchmode power supplies,AC/DC converters, isolated DC/DC converters and high voltage DC/AC converters. It serves as an efficient switch to handle high current signals from DC sources. It is also used in buck-boost converters, inverter designs, generator applications and automotive applications.
The working principle behind RGF1MHE3_A/I is the Schottky Barrier Effect. It is a phenomenon in which a small potential barrier exists between the metal surface of a semiconductor and the junction between the semiconductor and the vacuum. This barrier reduces the amount of voltage that can be applied across the junction and limits the current flow through it. When a positive voltage (Vf) is applied across the diode, electrons start to flow from the N-side of the diode to the P-side. This current creates a forward bias across the diode, reducing the barrier potential and allowing electrons to flow through it.
When a negative voltage is applied to the diode, the current flow through the junction stops, as the energy barrier height is too high for the electrons to overcome. This is known as the reverse bias, and it causes the diode to act as an open circuit. As the voltage is increased, the forward current increases, until the junction is no longer forward biased and the diode blocks any further current flow.
RGF1MHE3_A/I is a world-class Schottky Barrier Rectifier with an excellent on and off state performance. It has low forward voltage drop and high current conduction capability and is designed to provide superior power management solutions. The diode is ideal for use in wide variety of power management applications, allowing for efficient power conversion and improved system reliability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| RGF1BHE3/67A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGF1KHE3/67A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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| RGF1MHE3_A/H | Vishay Semic... | 0.12 $ | 1000 | DIODE 1000V SMDDiode |
| RGF1KHE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGF1MHE3_A/I | Vishay Semic... | 0.12 $ | 1000 | DIODE 1000V SMDDiode |
| RGF1J | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| RGF1G-E3/67A | Vishay Semic... | -- | 3000 | DIODE GEN PURP 400V 1A DO... |
| RGF1B-E3/67A | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGF1K | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 1A SM... |
| RGF1J-E3/67A | Vishay Semic... | 0.13 $ | 16500 | DIODE GEN PURP 600V 1A DO... |
| RGF1MHE3/67A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGF1M-7000HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGF1A-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
| RGF1K-E3/67A | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| RGF1B | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
| RGF1JHE3/5CA | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| RGF1D-E3/67A | Vishay Semic... | -- | 4500 | DIODE GEN PURP 200V 1A DO... |
| RGF1M-E3/67A | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
| RGF1GHE3/67A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RGF1J-E3/5CA | Vishay Semic... | 0.11 $ | 6500 | DIODE GEN PURP 600V 1A DO... |
| RGF1D-E3/5CA | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| RGF1MHE3/5CA | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| RGF1M | ON Semicondu... | 0.08 $ | 7500 | DIODE GEN PURP 1KV 1A SMA... |
| RGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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RGF1MHE3_A/I Datasheet/PDF