RGP02-15E-M3/54 Allicdata Electronics
Allicdata Part #:

RGP02-15E-M3/54-ND

Manufacturer Part#:

RGP02-15E-M3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GP 1.5KV 500MA DO204AL
More Detail: Diode Standard 1500V 500mA Through Hole DO-204AL (...
DataSheet: RGP02-15E-M3/54 datasheetRGP02-15E-M3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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RGP02-15E-M3/54 Application Field and Working Principle

Rectifiers are electronic components that allow current flow in one direction only, making them ideal for various applications within a range of electronic circuit designs. The RGP02-15E-M3/54 is a rectifier diode that can be used in a range of electronic designs. This article will look at the application field and working principle of the RGP02-15E-M3/54.

Applications

The RGP02-15E-M3/54 is a general-purpose rectifier diode that can be used for a wide range of applications. It is primarily used in power supplies, allowing current to flow from the power source to the load. The RGP02-15E-M3/54 can also be used for pulse applications, such as in switching power supplies for televisions, computers and other consumer electronics. In addition, the RGP02-15E-M3/54 can be used as free-wheeling diodes, which are often used in electro-mechanical and automotive applications.

Construction

The RGP02-15E-M3/54 is made up of two layers of semiconductor material, namely a p-type and an n-type layer. The p-type layer is made of boron-doped silicon, while the n-type layer is made of phosphorus-doped silicon. The two layers are connected together to form a pn-junction diode. This diode has two terminals, the anode and the cathode. The anode is connected to the p-type material, while the cathode is connected to the n-type material.

Working Principle

The working principle of the RGP02-15E-M3/54 can be understood by considering the behavior of electrons in a junction diode. When a voltage is applied across the two terminals of the diode, electrons move from the n-type material to the p-type material, creating a potential barrier within the diode. This potential barrier prevents current flow in the reverse direction, allowing only current flow in the forward direction.

The reverse breakdown voltage of the RGP02-15E-M3/54 is specified at 15V. This means that the voltage between the anode and cathode must exceed 15V before there is any current flow in the reverse direction. The maximum forward current that the RGP02-15E-M3/54 can handle is 3A. The forward voltage drop for the RGP02-15E-M3/54 is 0.54V.

Usable Characteristics

The RGP02-15E-M3/54 diode can be used in a variety of applications. It has a wide operating temperature range of -40°C to +125°C, making it suitable for use in temperature-sensitive applications. Additionally, it can handle high power loads, with a maximum continuous power dissipation of 4.75W. Its high surge current capability, 1A max, can be used to handle high-current spikes in loads.

Conclusion

The RGP02-15E-M3/54 is a versatile rectifier diode. Its low voltage drop and reverse breakdown voltage make it well suited for a range of power supply and switching power supply applications. Its wide temperature range and high surge current capability make it suitable for many other applications. It is an ideal component for a variety of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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