RGP02-20EHE3/54 Allicdata Electronics

RGP02-20EHE3/54 Discrete Semiconductor Products

Allicdata Part #:

RGP02-20EHE3/54GITR-ND

Manufacturer Part#:

RGP02-20EHE3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 2KV 500MA DO204
More Detail: Diode Standard 2000V 500mA Through Hole DO-204AL (...
DataSheet: RGP02-20EHE3/54 datasheetRGP02-20EHE3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: RGP02-20
Description

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Diodes are essential components in modern electronics and are often in use in many applications. The RGP02-20EHE3/54 is a single diode rectifier diode which offers high-speed switching and good stability over temperature changes. Its unique construction enables it to offer high blocking voltage and low reverse current leakage, making it useful for a variety of applications. In this article, we will discuss its application field, as well as its working principle.

Application Field

The RGP02-20EHE3/54 is suitable for a variety of power applications. It can be used for DC-DC converters, AC adapters, and general power supply converters. It is also used in switching circuits, high-frequency converters, and motor controllers. This device is also used in rectifier datas and automotive audio systems.

Its high blocking voltage and low reverse current leakage make it a great choice for high surge and high frequency applications. It can also be used in high-voltage low current applications and discharged lighting systems. When used in these applications, it helps to reduce power losses, thus increasing efficiency.

Working Principle

The RGP02-20EHE3/54 is a single-phase silicon rectifier diode. It contains an N-type and P-type semiconductor material. When a forward bias voltage is applied to this diode, the material enters the Conducting Layer, and current flows from anode to cathode. When a reverse bias voltage is applied, the material returns to the Reverse Mode and does not allow any current to flow.

This diode is built with what is called a Zener Barrier. This barrier prevents current leakage in the reverse bias condition and helps keep the diode stable at high temperatures. The Zener Barrier also helps increase the blocking voltage capability while reducing reverse current leakage. This makes the RGP02-20EHE3/54 suitable for high voltage and high frequency applications.

The RGP02-20EHE3/54 can also be used in applications where extra protection is not required. It will provide excellent performance and stability, even at high temperatures. This makes it an ideal choice for use in automotive and industrial applications.

Conclusion

The RGP02-20EHE3/54 is a single diode rectifier diode which offers high-speed switching and good stability over temperature changes. Its high blocking voltage allows it to be used in a variety of power applications and its low reverse current leakage makes it suitable for high voltage and high frequency applications. This makes it an ideal choice for use in automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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