Allicdata Part #: | RGP10DEHE3/91-ND |
Manufacturer Part#: |
RGP10DEHE3/91 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO204AL |
More Detail: | Diode Standard 200V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | RGP10DEHE3/91 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, Superectifier® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are electronic components used in almost all electronic circuits as they provide a convenient way to control the flow of current in a circuit. The RGP10DEHE3/91 is a single rectifier diode, which is a type of diode commonly used in power supplies, power electronics, and radio frequency (RF) circuits. The RGP10DEHE3/91 gets its name from its reverse recovery time, which is 10 nanoseconds. In this article, we will discuss the applications of the RGP10DEHE3/91 and its working principle.
Applications
The RGP10DEHE3/91 is a single rectifier diode, commonly used for either power conversion or signal rectification. In power conversion applications, the diode is typically inserted between an input signal and a load that needs to be operated at the input voltage level. In signal rectification applications, the diode is used to block the signal flow in one direction when the signal needs to be converted from alternating current (AC) to direct current (DC). Additionally, the diode can be used in RF circuits as a signal switch, as well as in voltage suppression circuits to reduce the voltage of a signal.
Working Principle
The working principle of the RGP10DEHE3/91 is based on the property of a diode to conduct current in only one direction. When a forward voltage is applied to the anode of a diode, electrons will flow from the anode to the cathode and the diode will be \'on\'. When a negative voltage is applied to the cathode, which is called the reverse bias, the diode acts as an insulator and no current flows through it. During the transition from being \'on\' to \'off\' when the reverse bias is applied, the diode has a reverse recovery time, which is the time it takes for the diode to switch from \'on\' to \'off\'. This time is 10 nanoseconds for the RGP10DEHE3/91.
Conclusion
The RGP10DEHE3/91 is a single rectifier diode used in power conversion and signal rectification applications. It has a reverse recovery time of 10 nanoseconds, which means it will switch from being \'on\' to \'off\' that quickly. The working principle of the diode is based on its ability to conduct current in one direction when a forward voltage is applied, and to act as an insulator when a reverse bias is applied.
The specific data is subject to PDF, and the above content is for reference
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RGP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10D-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10A-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGP10B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10D-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10G-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGP10BEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10DEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10GEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10JEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10KEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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RGP10MEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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RGP15GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RGP15JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
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