RGP10ME-M3/73

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RGP10ME-M3/73 is a single rectifier diode that is used in various applications to convert AC to DC power. It is designed to withstand voltage ripple and surges higher than those of other diodes and rectifiers, making it an ideal choice for use in automotives, lighting circuits, and industrial electronics. The RGP10ME-M3/73 is a relatively low-cost diode that is commonly used in industrial, automotive, and consumer applications.

The RGP10ME-M3/73 utilizes a schottky diode with a junction-barrier metal oxide semiconductor or J-MOS construction. This construction allows for the diode to withstand high voltages, up to 73 volts. The device is composed of a single PN junction and has no reverse recovery time. As a result, this diode can provide fast switching times and can handle high peak reverse voltages.

The RGP10ME-M3/73 is used as a switching element in AC-DC power supplies, such as those found in cars, laptops, and other consumer electronics. It can also be used for rectification and in-rush current suppression, making it an ideal choice for moderntechnology applications.

The working principle of the RGP10ME-M3/73 is fairly simple. When a forward voltage is applied to the diode, the PN junction forward-biases, allowing current to flow. The voltage drop of the forward-biased diode varies depending on the current, but it is typically around 0.7 volts. When the Voltage reaches zero, and the current drops to zero, the diode turns off and enters the reverse conduction state. The reverse breakdown voltage then pulls current through the diode, which is determined by the breakdown voltage of the diode.

The RGP10ME-M3/73 is an ideal choice for applications that require a reliable and efficient way to convert AC to DC power. It is a low-cost, high-performance solution for modern electronics applications and can handle higher voltage ripple and surges than other diodes. The device is composed of a single PN junction and features no reverse recovery time, resulting in fast switching times. Moreover, its schottky diode construction and junction-barrier metal oxide semiconductor enable it to withstand higher voltages, promising reliable performance even in harsh environments.

The specific data is subject to PDF, and the above content is for reference