| Allicdata Part #: | RJM0603JSC-00#12-ND |
| Manufacturer Part#: |
RJM0603JSC-00#12 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET 3N/3P-CH 60V 20A HSOP |
| More Detail: | Mosfet Array 3 N and 3 P-Channel (3-Phase Bridge) ... |
| DataSheet: |  RJM0603JSC-00#12 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tray |
| Part Status: | Active |
| FET Type: | 3 N and 3 P-Channel (3-Phase Bridge) |
| FET Feature: | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 20A |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 10V |
| Power - Max: | 54W |
| Operating Temperature: | 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
| Supplier Device Package: | 20-HSOP |
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The RJM0603JSC-00#12 is a transistor array manufactured by NXP. It is an insulated-gate field-effect transistor (IGFET) array, which is a type of metal-oxide semiconductor field-effect transistor (MOSFET). This device consists of two separate N-channel FET blocks, each containing two series-connected MOSFETs connected in parallel. The two N-channel blocks are connected in an inverse-parallel configuration, so that the drain and source terminals of one are connected to the source and drain terminals of the other, respectively. This arrangement provides an effective means of enhancing the total current voltage capabilities of the device.
The RJM0603JSC-00#12 is designed for a variety of applications. Its main purpose is to act as an amplifier or switch in a wide range of DC/DC converters. It can also be used for various other applications, such as in motor control circuits, gate drivers, level translators, and pulse generators. Additionally, the device can be used in bridge circuits, rectification, and active switching applications.
The working principle of the RJM0603JSC-00#12 is based on the MOSFETs that make up the two N-channel blocks. The MOSFETs allow current to flow when a potential is applied across their gate and source terminals. The current is then able to flow between the source and drain terminals of the MOSFETs. The amount of current that can flow between the two terminals is determined by the gate-source voltage, which is modulated by other signals in the circuit. This effectively allows the device to act as a switch, amplifier, level translator, or a rectifier.
In summary, the RJM0603JSC-00#12 is a transistor array consisting of two separate N-channel blocks. It is designed for a variety of applications, such as DC/DC converters, motor control circuits, gate drivers, level translators, pulse generators, bridge circuits, rectification, and active switching. The device works by having current flow between the source and drain terminals of the MOSFETs when a potential is applied across their gate and source terminals. This enables the device to act as a switch, amplifier, level translator, or a rectifier.
The specific data is subject to PDF, and the above content is for reference
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